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US 11,694,906 B2Granted
Semiconductor devices and methods of manufacturing semiconductor devices
AssigneeAmkor Technology Singapore Holding Pte. Ltd.
InventorsJae Yoon Kim, Ji Hun Lee, Suresh Jayaraman, David Hiner, Won Chul Do, Jin Young Khim, Ju Hong Shin, Kye Ryung Kim
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Abstract
In one example, a semiconductor device can comprise a unit substrate comprising a unit conductive structure and a unit dielectric structure, and an electronic component coupled to the unit conductive structure. The unit substrate can comprise a portion of a singulated subpanel substrate of a panel substrate. Other examples and related methods are also disclosed herein.
Claims21
A method, comprising:
- providing a subpanel substrate on a subpanel base, the subpanel substrate comprising a dielectric structure and a conductive structure, wherein the subpanel substrate comprises a singulated portion of a panel substrate, and wherein an outermost perimeter of the subpanel substrate is flush with an outermost perimeter of the subpanel base;
- providing:
- a first electronic component on a first side of the subpanel substrate and electrically coupled to a first portion of the conductive structure, and
- a second electronic component on the first side of the subpanel substrate and electrically coupled to a second portion of the conductive structure;
- removing the subpanel base;
- providing:
- a first external interconnect on a second side of the subpanel substrate and electrically coupled to the first portion of the conductive structure, and
- a second external interconnect on the second side of the subpanel substrate and electrically coupled to the second portion of the conductive structure;
- and
- singulating the subpanel substrate to provide individual unit substrates;
- wherein the subpanel base is removed after the first electronic component and the second electronic component are provided, and before the first external interconnect and the second external interconnect are provided;
- and
- wherein the panel substrate is singulated in a first singulation operation into the singulated portion of the panel substrate prior to providing the first electronic component and the second electronic component and prior to singulating the subpanel substrate into the individual unit substrates in a second singulation operation, wherein the first singulation operation includes singulating through the subpanel base.
10 more elements
A method comprising:
- receiving a first subpanel substrate on a first subpanel base, wherein the first subpanel substrate comprises a singulated portion of a panel substrate, and wherein an outermost perimeter of the first subpanel substrate is coplanar with an outermost perimeter of the first subpanel base, the first subpanel substrate comprising:
- a subpanel dielectric structure;
- a subpanel conductive structure coupled with the subpanel dielectric structure;
- a first unit substrate comprising:
- a first unit conductive structure comprising a first portion of the subpanel conductive structure;
- and
- a first unit dielectric structure comprising a first portion of the subpanel dielectric structure;
- a second unit substrate electrically coupled with the first unit substrate and comprising:
- a second unit conductive structure comprising a second portion of the subpanel conductive structure;
- and
- a second unit dielectric structure comprising a second portion of the subpanel dielectric structure;
- coupling a first electronic component with the first unit substrate;
- coupling a second electronic component with the second unit substrate;
- removing the first subpanel base;
- and
- singulating semiconductor devices from the first subpanel substrate, the semiconductor devices comprising:
- a first semiconductor device comprising the first unit substrate and the first electronic component;
- and
- a second semiconductor device comprising the second unit substrate and the second electronic component;
- wherein the first subpanel base is removed after the first electronic component is coupled with the first unit substrate and the second electronic component is coupled with the second unit substrate;
- and
- wherein the panel substrate is singulated in a first singulation operation into the singulated portion of the panel substrate prior to coupling the first electronic component and the second electronic component and prior to singulating the first semiconductor device and the second semiconductor device from the first subpanel substrate in a second singulation operation, wherein the first singulation operation includes singulating through the first subpanel base.
19 more elements
A method, comprising:
- singulating a panel substrate formed on a panel base to provide a singulated subpanel substrate on a subpanel base, wherein an outermost perimeter of the singulated subpanel substrate is flush with an outermost perimeter of the subpanel base;
- providing a unit substrate comprising a unit conductive structure and a unit dielectric structure, and an electronic component coupled to the unit conductive structure;
- and
- removing the subpanel base;
- wherein the unit substrate comprises a portion of the singulated subpanel substrate of the panel substrate;
- wherein the subpanel base is removed after the electronic component is coupled with the unit substrate;
- and
- wherein the panel substrate is singulated in a first singulation operation into the singulated subpanel substrate prior to providing the electronic component and prior to singulating the singulated subpanel substrate into the unit substrate in a second singulation operation, wherein the first singulation operation includes singulating through the subpanel base.
5 more elements
Dependencies are inferred from the claim text.