Methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers

A non-transitory computer readable medium for processing a substrate comprising instructions that, when executed, cause a plurality of operations to be conducted, the plurality of operations comprising:

• depositing one or more amorphous carbon hardmask layers onto the substrate;
• conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers, the rapid thermal anneal operation lasting for an anneal time that is within a range of 8 seconds to 12 seconds, and the rapid thermal anneal operation comprising:
• heating the substrate to an anneal temperature that is within a range of 880 degrees Celsius to 920 degrees Celsius;
• and
• etching the substrate after conducting the rapid thermal anneal operation.

A system for processing a substrate, comprising:

• a deposition chamber;
• an anneal chamber;
• a transfer chamber coupled to the deposition chamber and the anneal chamber;
• a cryogenic etch chamber;
• a controller comprising instructions that, when executed, cause:
• the deposition chamber to deposit one or more amorphous carbon hardmask layers onto the substrate,
• the anneal chamber to conduct a rapid thermal anneal operation on the substrate after the depositing the one or more amorphous carbon hardmask layers onto the substrate, the rapid thermal anneal operation lasting for an anneal time that is within a range of 8 seconds to 12 seconds, and the rapid thermal anneal operation comprising:
• heating the substrate to an anneal temperature that is within a range of 880 degrees Celsius to 920 degrees Celsius;
• and
• the cryogenic etch chamber to etch the substrate after the rapid thermal anneal operation is conducted.