Crystalline film containing a crystalline metal oxide and method for manufacturing the same under partial pressure
AssigneeFlosfia Inc.
InventorsYuichi Oshima, Katsuaki Kawara
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Abstract
A high-quality crystalline film having less impurity of Si and the like and useful in semiconductor devices is provided. A crystalline film containing a crystalline metallic oxide including gallium as a main component, wherein the crystalline film includes a Si in a content of 2×1015 cm−3 or less.
Claims21
A crystalline film containing a crystalline metal oxide including gallium as a main component,
- wherein the crystalline film includes a Si in a content of less than 1×1015 cm−3, and
- the crystalline film includes a content of C of 5×1016 cm−3 or less.
A semiconductor device including a crystalline film containing a crystalline metal oxide including gallium as a main component,
- wherein the crystalline film includes a Si in a content of less than 1×1015 cm−3, and
- the crystalline film includes a content of C of 5×1016 cm−3 or less.
A semiconductor system comprising a semiconductor device including a crystalline film containing a crystalline metal oxide including gallium as a main component,
- wherein the crystalline film includes a Si in a content of less than 1×1015 cm−3, and
- the crystalline film includes a content of C of 5×1016 cm−3 or less.
A method for manufacturing a crystalline film for depositing a crystalline film on a substrate by crystal growth from a raw material, wherein the raw material contains GaCl3, and wherein the crystal growth is performed under a condition in which a partial pressure of the raw material is 1 kPa or more and an atmosphere containing oxygen, and wherein the crystalline film deposited on the substrate includes a Si in a content of less than 1×1015 cm−3.
Dependencies are inferred from the claim text.