Substrate processing method and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsKiwamu Ito, Keiko Hosoe, Yamato Tonegawa
Life of this patent
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Abstract
A substrate processing method for forming a nitride film on a substrate, includes: a raw material gas supply step of supplying a raw material gas containing an element to be nitrided; a hydrogen gas supply step of, after the raw material gas supply step, supplying a hydrogen gas activated by plasma; a thermal nitriding step of supplying a first nitriding gas containing nitrogen activated by heat and nitriding the element; and a plasma nitriding step of supplying a second nitriding gas containing nitrogen activated by plasma and nitriding the element.
Claims11
A substrate processing method for forming a nitride film on a substrate, comprising:
- a raw material gas supply step of supplying a raw material gas containing an element to be nitrided;
- a hydrogen gas supply step of, after the raw material gas supply step, supplying a hydrogen gas activated by plasma;
- a thermal nitriding step of supplying a first nitriding gas containing nitrogen activated by heat and nitriding the element for a first time period;
- and
- a plasma nitriding step of supplying a second nitriding gas containing nitrogen activated by plasma and nitriding the element for a second time period,
- wherein a ratio between the first time period and the second time period is determined based on a film distribution, the film distribution indicating thickness according to a portion in the nitride film to be formed on the substrate, which ranges from a central portion to a peripheral portion of the nitride film to be formed on the substrate.
A substrate processing method for forming a nitride film on a substrate, comprising:
- a performing step of performing a first cycle for a first number of times;
- and
- a performing step of performing a second cycle for a second number of times,
- wherein the first cycle includes:
- a first raw material gas supply step of supplying a raw material gas containing an element to be nitrided;
- a first hydrogen gas supply step of, after the first raw material gas supply step, supplying a hydrogen gas activated by plasma;
- and
- a thermal nitriding step of, after the first hydrogen gas supply step, supplying a first nitriding gas containing nitrogen activated by heat and nitriding the element,
- wherein the second cycle includes:
- a second raw material gas supply step of supplying the raw material gas containing the element to be nitrided;
- and
- a plasma nitriding step of, after the second raw material gas supply step, supplying a second nitriding gas containing nitrogen activated by plasma and nitriding the element, and
- wherein the first number of times and the second number of times are determined based on a film distribution, the film distribution indicating thickness according to a portion in the nitride film to be formed on the substrate, which ranges from a central portion to a peripheral portion of the nitride film to be formed on the substrate.
Dependencies are inferred from the claim text.