A control method for a plasma processing apparatus, wherein the plasma processing apparatus includes:
- a gas supply system;
- a chamber having a shower head, at least one gas injection hole connected to the gas supply system, and at least one gas exhaust port connected to an exhaust mechanism;
- a substrate support disposed in the chamber and configured to support a substrate having an etching target film;
- a power supply for plasma generation;
- and a controller, wherein the gas supply system includes:
- a first gas supply line that is connected to the at least one gas injection hole and a first gas source and configured to supply a first processing gas into the chamber;
- a second gas supply line that is connected to the at least one gas injection hole and a second gas source and configured to supply a second processing gas into the chamber;
- a first gas exhaust line that is branched from the first gas supply line and configured to exhaust the first processing gas flowing through the first gas supply line to an outside of the chamber;
- a second gas exhaust line that is branched from the second gas supply line and configured to exhaust the second processing gas flowing through the second gas supply line to the outside of the chamber;
- a first supply on/off valve that is disposed at a downstream side of a branch point of the first gas supply line where the first gas exhaust line is branched and configured to switch an ON/OFF state of the first gas supply line;
- a second supply on/off valve that is disposed at a downstream side of a branch point of the second gas supply line where the second gas exhaust line is branched and configured to switch an ON/OFF state of the second gas supply line;
- a first exhaust on/off valve configured to switch an ON/OFF state of the first gas exhaust line;
- and a second exhaust on/off valve configured to switch an ON/OFF state of the second gas exhaust line,
- the control method comprising:
- (a) disposing the substrate on the substrate support;
- (b) controlling the first supply on/off valve and the second exhaust on/off valve to be in an open state and the second supply on/off valve and the first exhaust on/off valve to be in a closed state and supplying the first processing gas into the chamber to adsorb an adsorbate generated based on the first processing gas on the substrate;
- (c) controlling the second supply on/off valve and the first exhaust on/off valve to be in the open state and the first supply on/off valve and the second exhaust on/off valve to be in the closed state and supplying the second processing gas into the chamber to activate the adsorbate;
- (d) repeating (b) and (c);
- when switching from (b) to (c), controlling the first supply on/off valve and the second exhaust on/off valve to be in a closed state and the second supply on/off valve and the first exhaust on/off valve to be in an open state;
- and
- when switching from (c) to (b), controlling the second supply on/off valve and the first exhaust on/off valve to be in the closed state and the first supply on/off valve and the second exhaust on/off valve to be in the open state.