Uncorrectable ECC
AssigneeMicron Technology, Inc.
InventorsJianmin Huang, Deping He, Xiangang Luo, Harish Reddy Singidi, Kulachet Tanpairoj, John Zhang, Ting Luo
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Abstract
Disclosed in some examples are NAND devices, firmware, systems, methods, and devices that apply smart algorithms to process ECC errors by taking advantage of excess overprovisioning. In some examples, when the amount of overprovisioned blocks are above a predetermined threshold, a first ECC block error handling mode may be implemented and when the overprovisioned blocks are equal or less than the predetermined threshold, a second mode of ECC block error handling may be utilized.
Claims20
A NAND memory device comprising:
- a controller configured to perform operations comprising:
- reading a first value stored in a first unit of data of an array of NAND memory cells;
- performing a first Error Correction Code (ECC) check on the first value;
- determining that the first ECC check failed;
- based upon a determination that a number of remaining overprovisioned blocks in the array of NAND memory cells exceeds a threshold and based upon determining that the first ECC check failed, executing a first error handling mode on the first unit of data;
- reading a second value stored in a second unit of data of the array of NAND memory cells;
- performing a second Error Correction Code (ECC) check on the second value;
- determining that the second ECC check failed;
- and
- based upon a determination that the number of remaining overprovisioned blocks in the array of NAND memory cells no longer exceeds the threshold and based upon determining that the second ECC check failed, executing a second error handling mode on the second unit of data, the first error handling mode being faster to complete than the second error handling mode.
A method comprising:
- reading a first value stored in a first unit of data of an array of NAND memory cells;
- performing a first Error Correction Code (ECC) check on the first value;
- determining that the first ECC check failed;
- based upon a determination that a number of remaining overprovisioned blocks in the array of NAND memory cells exceeds a threshold and based upon determining that the first ECC check failed, executing a first error handling mode on the first unit of data;
- reading a second value stored in a second unit of data of the array of NAND memory cells;
- performing a second Error Correction Code (ECC) check on the second value;
- determining that the second ECC check failed;
- and
- based upon a determination that the number of remaining overprovisioned blocks in the array of NAND memory cells no longer exceeds the threshold and based upon determining that the second ECC check failed, executing a second error handling mode on the second unit of data, the first error handling mode being faster to complete than the second error handling mode.
A non-transitory machine-readable medium, storing instructions, which when executed, cause a NAND memory device to perform operations comprising:
- reading a first value stored in a first unit of data of an array of NAND memory cells;
- performing a first Error Correction Code (ECC) check on the first value;
- determining that the first ECC check failed;
- based upon a determination that a number of remaining overprovisioned blocks in the array of NAND memory cells exceeds a threshold and based upon determining that the first ECC check failed, executing a first error handling mode on the first unit of data;
- reading a second value stored in a second unit of data of the array of NAND memory cells;
- performing a second Error Correction Code (ECC) check on the second value;
- determining that the second ECC check failed;
- and
- based upon a determination that the number of remaining overprovisioned blocks in the array of NAND memory cells no longer exceeds the threshold and based upon determining that the second ECC check failed, executing a second error handling mode on the second unit of data, the first error handling mode being faster to complete than the second error handling mode.
Dependencies are inferred from the claim text.