Nonvolatile memory with data recovery
AssigneeSanDisk Technologies LLC
InventorsHiroyuki Mizukoshi, Heguang Li, Althaf Rahamathulla, Qihan Li
Life of this patent
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Abstract
An apparatus includes control circuits configured to connect to a plurality of non-volatile memory cells. The control circuits are configured to abort fine programming of the plurality of non-volatile memory cells at an intermediate stage and read the plurality of non-volatile memory cells at the intermediate stage to obtain first partial data of at least one logical page. The control circuits are configured obtain the at least one logical page of data by combining the first partial data with second partial data of the at least one logical page stored in data latches.
Claims20
An apparatus comprising:
- one or more control circuits configured to connect to a plurality of non-volatile memory cells,
- the one or more control circuits are configured to:
- initiate fine programming of the plurality of non-volatile memory cells from initial data states to final data states such that memory cells programmed to a first initial data state are fine programmed to at least a first final data state and a second final data state that are separated by a third final data state corresponding to a second initial data state, abort fine programming of the plurality of non-volatile memory cells at an intermediate stage, read the plurality of non-volatile memory cells at the intermediate stage to obtain first partial data of at least one logical page, and obtain the at least one logical page of data by combining the first partial data with second partial data of the at least one logical page stored in data latches.
A method comprising:
- programming a plurality of non-volatile memory cells from a plurality of initial data states to a plurality of final data states in a fine programming operation in which non-volatile memory cells from a first initial data state are programmed to a first threshold voltage range and a second threshold voltage range that are separated by a third threshold voltage range and non-volatile memory cells from a second initial data state are programmed to the third threshold voltage range;
- aborting fine programming of the plurality of non-volatile memory cells prior to completion of programming of all final data states;
- identifying a logical page of data to be recovered;
- reading the plurality of non-volatile memory cells to obtain read data of the logical page of data;
- combining the read data of the logical page of data with latched data in a plurality of latches for programming of the logical page of data to obtain a complete recovered logical page of data;
- and
- storing the complete recovered logical page of data in another plurality of non-volatile memory cells.
A data storage system comprising:
- a plurality of non-volatile memory cells coupled to a plurality of word lines;
- and
- means for fine programming the plurality of non-volatile memory cells from initial data states to final data states in a fine programming operation in which non-volatile memory cells from a first initial data state are programmed to a first threshold voltage range and a second threshold voltage range that are separated by a third threshold voltage range and non-volatile memory cells from a second initial data state are programmed to the third threshold voltage range, aborting fine programming of the plurality of non-volatile memory cells at an intermediate stage, reading the plurality of non-volatile memory cells at the intermediate stage to obtain first partial data of at least one logical page, and obtain the at least one logical page of data by combining the first partial data with second partial data of the at least one logical page stored in data latches.
Dependencies are inferred from the claim text.