Self-selecting memory cells configured to store more than one bit per memory cell

A method, comprising:

• receiving a first request to program a threshold voltage of a memory cell to a level representative of a third value different from a first value and a second value;
• and
• in response to the first request,
• driving a first voltage pulse across the memory cell to cause a predetermined current to go through the memory cell;
• and
• driving a second voltage pulse, different from the first voltage pulse, across the memory cell, wherein a duration of the second voltage pulse is no more than one tenth of a duration of the first voltage pulse.

An integrated circuit, comprising:

• a layer of bitlines;
• a layer of wordlines;
• memory cells configured between the layer of the bitlines and the layer of the wordlines, each of the memory cells connected to a bitline among the bitlines and to a wordline among the wordlines;
• bitline drivers connected to the bitlines;
• wordline drivers connected to the wordlines;
• and
• a controller coupled to the bitline drivers and the wordline drivers and configured to, in response to a request to program a threshold voltage of a first memory cell, among the memory cells, to a level representative of a third value different from a first value and a second value,
• instruct a first voltage driver, among the bitline drivers and the wordline drivers, to drive a first voltage level onto a first side of the memory cell relative to ground for a first period of time;
• and
• instruct a second voltage driver, among the bitline drivers and the wordline drivers, to drive a second voltage level onto a second side of the memory cell relative to the ground for a second period of time, wherein:
• the first period of time includes the second period of time;
• the first voltage level and the second voltage level have different polarities relative to the ground;
• and
• a difference between the first period of time and the second period of time is no more than one tenth of a during of the first period of time.