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US 11,694,713 B2Granted
BiSb topological insulator with novel buffer layer that promotes a BiSb (012) orientation
AssigneeWestern Digital Technologies, Inc.
InventorsQuang Le, Cherngye Hwang, Brian R. York, Thao A. Nguyen, Zheng Gao, Kuok San Ho, Pham Nam Hai
Life of this patent
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Abstract
A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.
Claims20
A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device, comprising:
- a substrate;
- a buffer layer formed over the substrate, the buffer layer comprising:
- a pre-seed layer over the substrate, the pre-seed layer comprising a material selected from a group consisting of NiTa, NiFeTa, CoZrTa, NiNb, NiFeTa, NiFeW, CoHf, CoFeHf, CoFeHfB, NiFeB, CoFeB, Ge, Co, CoFe, NiCr, Ni, Cu, NiFe, Ru, Pt, Rh, silicon oxide, aluminum oxide, magnesium oxide, TiN, AlN, and alloys thereof;
- a seed layer over the pre-seed layer, the seed layer comprising a material selected from a group consisting of Co, CoFe, Ni, NiFe, NiCr, NiTa, NiFeTa, Cu, CuAgNi, RuX, CuX, CuNiX, CoFeX, CoNiX, FeX, NiX, and CoX, wherein X is selected from the group consisting of Cr, Ag, Pt, Ir, Rh, and combinations thereof;
- and
- a crystalline layer over the seed layer, the crystalline layer comprising a material selected from a group consisting of Co, CoFe, Ni, NiFe, NiCr, NiTa, NiFeTa, Cu, CuAgNi, RuX, CuX, CuNiX, CoFeX, CoNiX, FeX, NiX, and CoX, wherein X is selected from the group consisting of Cr, Ag, Pt, Ir, Rh, and combinations thereof;
- and
- a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation.
5 more elements
A microwave assisted magnetic recording (MAMR) write head, comprising:
- a main pole and a trailing shield;
- and
- a spin-orbit torque (SOT) device disposed in a gap between the main pole and the trailing shield, the SOT device comprising:
- a substrate;
- a buffer layer formed over the substrate, wherein the buffer layer comprises:
- a pre-seed layer over the substrate, the pre-seed layer comprising a material selected form a group consisting of NiTa, NiFeTa, CoZrTa, NiNb, NiFeTa, NiFeW, CoHf, CoFeHf, CoFeHfB, NiFeB, CoFeB, Ge, Co, CoFe, NiCr, Ni, Cu, NiFe, Ru, Pt, Rh, silicon oxide, aluminum oxide, magnesium oxide, TiN, AlN, and alloys thereof;
- a seed layer over the pre-seed layer, the seed layer comprising a material selected from a group consisting of Co, CoFe, Ni, NiFe, NiCr, NiTa, NiFeTa, Cu, CuAgNi, RuX, CuX, CuNiX, CoFeX, CoNiX, FeX NiX, and CoX, wherein X is selected from the group consisting of Cr, Ag, Pt, Ir, Rh, and combinations thereof;
- and
- a crystalline layer over the seed layer, the crystalline layer comprising a material selected from a group consisting of Co, CoFe, Ni, NiFe, NiCr, NiTa, NiFeTa, Cu, CuAgNi, RuX, CuX, CuNiX, CoFeX, CoNiX, FeX NiX, and CoX, wherein X is selected from the group consisting of Cr, Ag, Pt, Ir, Rh, and combinations thereof;
- a bismuth antimony (BiSb) layer over the buffer layer, wherein the BiSb layer has a (012) orientation and is a spin Hall layer;
- and
- a spin torque layer formed over the BiSb layer.
9 more elements
A magnetoresistive random access memory (MRAM) device, comprising
- a recording layer;
- a buffer layer formed over the recording layer, wherein the buffer layer comprises:
- a pre-seed layer over the recording layer, the pre-seed layer comprising a material selected form a group consisting of NiTa, NiFeTa, CoZrTa, NiNb, NiFeTa, NiFeW, CoHf, CoFeHf, CoFeHfB, NiFeB, CoFeB, Ge, Co, CoFe, NiCr, Ni, Cu, NiFe, Ru, Pt, Rh, silicon oxide, aluminum oxide, magnesium oxide, TiN, AlN, and alloys thereof;
- a seed layer over the pre-seed layer, the seed layer comprising a material selected from a group consisting of Co, CoFe, Ni, NiFe, NiCr, NiTa, NiFeTa, Cu, CuAgNi, RuX, CuX, CuNiX, CoFeX, CoNiX, FeX NiX, and CoX, wherein X is selected from the group consisting of Cr, Ag, Pt, Ir, Rh, and combinations thereof;
- and
- a crystalline layer over the seed layer, the crystalline layer comprising a material selected from a group consisting of Co, CoFe, Ni, NiFe, NiCr, NiTa, NiFeTa, Cu, CuAgNi, RuX, CuX, CuNiX, CoFeX, CoNiX, FeX NiX, and CoX, wherein X is selected from the group consisting of Cr, Ag, Pt, Ir, Rh, and combinations thereof;
- and
- a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation.
5 more elements
Dependencies are inferred from the claim text.