Temperature-based on board placement of memory devices
AssigneeMicron Technology, Inc.
InventorsZhenlei Shen, Tingjun Xie, Charles See Yeung Kwong
Life of this patent
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Abstract
A quality rating for a memory device to be installed at a memory sub-system is determined, where the quality rating corresponds to a performance of the memory device at one or more operating temperatures. A determination is made whether the quality rating for the memory device satisfies a first quality rating condition associated with a first temperature zone of two or more temperature zones of the memory sub-system. Responsive to the determination that the quality rating for the memory device satisfies the first quality rating condition, the memory device is assigned to be installed at a first memory device socket of the first temperature zone.
Claims20
A method comprising:
- identifying data associated with a memory device to be installed at a memory sub-system, wherein the data indicates a first performance of one or more memory operations measured at the memory device at a first operating temperature and a second performance of the one or more memory operations measured at the memory device at a second operating temperature;
- determining a quality rating for the memory device based on the identified data, wherein the quality rating corresponds to a performance metric indicating at least one of the first performance or the second performance of the memory device;
- determining whether the quality rating for the memory device exceeds a first quality rating threshold associated with a first temperature zone of a plurality of temperature zones of the memory sub-system;
- and
- responsive to determining the quality rating for the memory device exceeds the first quality rating threshold, assigning the memory device to be installed at a first memory device socket of the first temperature zone.
A system comprising:
- a memory device;
- and
- a processing device operatively coupled to the memory device, the processing device to:
- identify data associated with a set of memory devices to be installed at a memory sub-system, wherein the data indicates a first performance of one or more memory operations measured at a respective memory device of the set of memory devices at a first operating temperature and a second performance of the one or more memory operations measured at the respective memory device at a second operating temperature;
- determine a quality rating for each of the set of memory devices based on the identified data, wherein each quality rating corresponds to a performance metric indicating at least one of the first performance or the second performance of the respective memory device;
- identify, at the memory sub-system, a plurality of temperature zones each comprising one or more memory device sockets, wherein each of the plurality of temperature zones is associated with a temperature zone rating;
- determine, for each of the set of memory devices, a temperature zone of the plurality of temperature zones associated with the temperature zone rating that corresponds to the quality rating of a respective memory device;
- and
- assign each of the set of memory devices to be installed at a memory device socket of a determined temperature zone.
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to:
- identify data associated with a memory device to be installed at a memory sub-system, wherein the data indicates a first performance of one or more memory operations measured at the memory device at a first operating temperature and a second performance of the one or more memory operations measured at the memory device at a second operating temperature;
- determine a quality rating for the memory device based on the identified data, wherein the quality rating corresponds to a performance metric indicating at least one of the first performance or the second performance of the memory device;
- determine whether the quality rating for the memory device exceeds a first quality rating threshold associated with a first temperature zone of a plurality of temperature zones of the memory sub-system;
- and
- responsive to determining the quality rating for the memory device exceeds the first quality rating threshold, assigning the memory device to be installed at a first memory device socket of the first temperature zone.
Dependencies are inferred from the claim text.