Dynamic size of static SLC cache
AssigneeMicron Technology, Inc.
InventorsXiangang Luo, Jianmin Huang
Life of this patent
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Abstract
Apparatus and methods are disclosed, including using a memory controller to track a maximum logical saturation over the lifespan of the memory device, where logical saturation is the percentage of capacity of the memory device written with data. A portion of a pool of memory cells of the memory device is reallocated from single level cell (SLC) static cache to SLC dynamic cache storage based at least in part on a value of the maximum logical saturation, the reallocating including writing at least one electrical state to a register, in some examples.
Claims20
A storage system comprising:
- a memory device including single level cell (SLC) static cache memory cells and SLC dynamic cache memory cells;
- and
- a memory controller configured to perform operations comprising:
- tracking a maximum logical saturation over a lifespan of the memory device, where logical saturation is the percentage of a capacity of the memory device written with data at a particular time during the lifespan of the memory device;
- using the tracked logical saturation as an input to a table stored in the memory device;
- and
- determining a portion of a pool of memory cells of the memory device to be reallocated from single level cell (SLC) static cache memory cells to SLC dynamic cache memory cells using the table and based on a current value of the maximum logical saturation, the reallocating including writing at least one electrical state to a register, wherein the capacity of the memory device is variable based on the reallocating.
A method comprising:
- at a memory controller of a memory device having a lifespan:
- during operation of the memory device, tracking a maximum logical saturation over the lifespan of the memory device, where logical saturation is the percentage of a capacity of the memory device written with data at a particular time during the lifespan of the memory device;
- using the tracked logical saturation as an input to a table stored in the memory device;
- and
- determining a portion of a pool of memory cells of the memory device to be reallocated from single level cell (SLC) static cache memory cells to SLC dynamic cache memory cells using the table and based on a current value of the maximum logical saturation, the reallocating including writing at least one electrical state to a register, wherein the capacity of the memory device is variable based on the reallocating.
A machine-readable medium, storing instructions, when performed by a controller of a memory device, cause the controller to perform operations during operation of the memory device comprising:
- tracking a maximum logical saturation over a lifespan of the memory device, where logical saturation is the percentage of a capacity of the memory device written with data at a particular time during the lifespan of the memory device;
- using the tracked logical saturation as an input to a table stored in the memory device;
- and
- determining a portion of a pool of memory cells of the memory device to be reallocated from single level cell (SLC) static cache memory cells to SLC dynamic cache memory cells using the table and based on a current value of the maximum logical saturation, the reallocating including writing at least one electrical state to a register, wherein the capacity of the memory device is variable based on the reallocating.
Dependencies are inferred from the claim text.