System driven pass-through voltage adjustment to improve read disturb in memory devices
AssigneeMicron Technology, Inc.
InventorsSandeep Reddy Kadasani, Scott Anthony Stoller, Pitamber Shukla, Niccolo' Righetti, Chi Ming Chu
Life of this patent
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Abstract
A read operation is performed on a memory device in accordance with a pass-through voltage setting that defines a pass-through voltage applied to one or more cells of the memory device during read operations. A number of zero bits read from the memory device based on the read operation are counted and compared with a threshold value. Based on the number of zero bits exceeding the threshold value, the pass-through voltage is increased by adjusting the pass-through voltage setting.
Claims20
A system comprising:
- a memory device;
- and
- a processing device coupled to the memory device, the processing device configured to perform operations comprising:
- performing a first read operation on the memory device in accordance with a pass-through voltage setting that defines a pass-through voltage applied to one or more cells of the memory device during read operations, the performing of the first read operation comprising applying the pass-through voltage to all word lines in a page of the memory device;
- counting a first number of zero bits read from the page of the memory device based on the first read operation;
- comparing the first number of zero bits read from the page of the memory device with a threshold number of failing bits, the threshold number of failing bits being based on a page size of the memory device and an expected failure rate of cells of the memory device;
- and
- based on the first number of zero bits read from the page of the memory device exceeding the threshold number of failing bits, increasing the pass-through voltage applied to one or more cells of the memory device during read operations by adjusting the pass-through voltage setting.
A method comprising:
- performing a first read operation on the memory device in accordance with a pass-through voltage setting that defines a pass-through voltage applied to one or more cells of the memory device during read operations, the performing of the first read operation comprising applying the pass-through voltage to all word lines in a page of the memory device;
- counting a first number of zero bits read from the page of the memory device based on the first read operation;
- comparing the first number of zero bits read from the page of the memory device with a threshold number of failing bits, the threshold number of failing bits being based on a page size of the memory device and an expected failure rate of cells of the memory device;
- and
- based on the first number of zero bits read from the page of the memory device exceeding the threshold number of failing bits, increasing the pass-through voltage applied to one or more cells of the memory device during read operations by adjusting the pass-through voltage setting.
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, configured the processing device to perform operation comprising:
- performing a read operation on the memory device in accordance with a pass-through voltage setting that defines a pass-through voltage applied to one or more cells of the memory device during read operations, the performing of the read operation comprising applying the pass-through voltage to all word lines in a page of the memory device;
- counting a number of zero bits read from the page of the memory device based on the read operation;
- comparing the number of zero bits read from the page of the memory device with a threshold number of failing bits, the threshold number of failing bits being based on a page size of the memory device and an expected failure rate of cells of the memory device;
- and
- based on the number of zero bits read from the page of the memory device exceeding the threshold number of failing bits, increasing the pass-through voltage applied to one or more cells of the memory device during read operations by adjusting the pass-through voltage setting.
Dependencies are inferred from the claim text.