Apparatus and a method of forming a particle shield
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorWen-Hao Cheng
Life of this patent
Estimating the term…
Abstract
A lithography system includes a radiation source configured to generate a radiation, a reticle configured to redirect the radiation, a first type injection nozzle proximal to the reticle and configured to generate a first particle shield in a propagation path of the radiation, and a second type injection nozzle proximal to the radiation source and configured to generate a second particle shield in the propagation path of the radiation. The second type injection nozzle and the first type injection nozzle are of different types.
Claims20
A lithography system, comprising:
- a radiation source configured to generate a radiation;
- a reticle configured to redirect the radiation;
- a first type injection nozzle proximal to the reticle and configured to generate a first particle shield in a propagation path of the radiation;
- and
- a second type injection nozzle proximal to the radiation source and configured to generate a second particle shield in the propagation path of the radiation, wherein the second type injection nozzle and the first type injection nozzle are of different types.
A lithography system, comprising:
- an extreme ultraviolet (EUV) radiation source configured to generate an EUV radiation;
- a reticle configured to redirect the EUV radiation;
- a first injection nozzle proximal to the reticle and configured to generate a first particle shield in a propagation path of the EUV radiation;
- and
- a second injection nozzle proximal to the radiation source and configured to generate a second particle shield in the propagation path of the EUV radiation, wherein the first particle shield is substantially parallel to a top surface of the reticle, and the second particle shield is tilted with respect to the top surface of the reticle.
A method, comprising:
- generating a radiation towards a photomask along a radiation path;
- generating a first particle shield by a first injection nozzle, wherein the first particle shield is positioned in the radiation path and parallel to the photomask;
- and
- generating a second particle shield by a second injection nozzle, wherein the second particle shield is positioned in the radiation path and tilted with respect to the photomask.
Dependencies are inferred from the claim text.