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US 11,693,324 B2Granted
System and method for detecting debris in a photolithography system
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Yu Tu, Chieh Hsieh, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu
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Abstract
An extreme ultraviolet (EUV) photolithography system detects debris travelling from an EUV generation chamber to a scanner. The photolithography system includes a detection light source and a sensor. The detection light source outputs a detection light across a path of travel of debris particles from the EUV generation chamber. The sensor senses debris particles by detecting interaction of the debris particles with the detection light.
Claims20
A method, comprising:
- generating extreme ultraviolet light from droplets in an extreme ultraviolet light generation chamber by irradiating the droplets with a laser;
- directing the extreme ultraviolet light from the extreme ultraviolet light generation chamber to a scanner via an aperture joining the extreme ultraviolet light generation chamber to the scanner;
- outputting, with a detection light source in the scanner, a detection light across a path of travel of the extreme ultraviolet light and toward a light sensor in the scanner;
- detecting debris particles traveling from the extreme ultraviolet light generation chamber into the scanner by detecting, with the light sensor, interaction of the debris particles with the detection light;
- directing, with first optical conditioning devices within the scanner, the extreme ultraviolet light passed between the detection light source and the light sensor to a reticle within the scanner after;
- and
- directing, with second optical conditioning devices within the scanner, the extreme ultraviolet light from the reticle to a wafer.
4 more elements
A method, comprising:
- generating extreme ultraviolet light in an extreme ultraviolet light generation chamber;
- passing, via an aperture in the extreme ultraviolet light generation chamber, the extreme ultraviolet light from the extreme ultraviolet light generation chamber into a scanner including a detection light source and a light sensor;
- outputting, from the detection light source, detection light across a path of travel of the extreme ultraviolet light adjacent to the aperture toward the light sensor;
- detecting debris particles travelling from the extreme ultraviolet light generation chamber by sensing, with the light sensor, interaction of the detection light with the debris particles;
- directing, with optical conditioning devices within the scanner, the extreme ultraviolet light to a reticle within the scanner after the extreme ultraviolet light passes between the detection light source and the light sensor;
- and
- directing extreme ultraviolet light reflected from the reticle to a wafer for performing a photolithography process on the wafer.
4 more elements
A photolithography system, comprising:
- an extreme ultraviolet light generation chamber;
- extreme ultraviolet light generation equipment configured to generate extreme ultraviolet light in the extreme ultraviolet light generation chamber;
- and
- a scanner coupled to the extreme ultraviolet light generation chamber and configured to receive the extreme ultraviolet light from the extreme ultraviolet light generation chamber, the scanner includes:
- a reticle having a pattern;
- a detection light source configured to output a detection light adjacent to an aperture;
- a light sensor configured to detect debris particles from the extreme ultraviolet light generation chamber by detecting interaction of the debris particles with the detection light, the extreme ultraviolet light passing between the detection light source and the light sensor;
- and
- optical conditioning devices configured to direct the extreme ultraviolet light passed between the detection light source and the light sensor to the reticle, and direct reflected extreme ultraviolet light from the reticle to a wafer.
6 more elements
Dependencies are inferred from the claim text.