Secondary imaging optical lithography method and apparatus

A secondary imaging optical lithography method comprising:

• contacting a lithography mask plate with a flexible transparent transfer substrate closely, the flexible transparent transfer substrate comprising a first near-field imaging structure having a photosensitive layer;
• irradiating the photosensitive layer of the flexible transparent transfer substrate through the lithography mask plate with a first light source, so as to transfer a pattern of the lithography mask plate to the photosensitive layer of the flexible transparent transfer substrate;
• coating a device substrate for fabricating devices with a photoresist;
• contacting the flexible transparent transfer substrate with the photoresist-coated device substrate closely;
• irradiating the device substrate through the flexible transparent transfer substrate with a second light source, so as to transfer a pattern of the photosensitive layer of the flexible transparent transfer substrate to the photoresist of the device substrate by exposing the photoresist;
• and
• developing the device substrate comprising an exposed photoresist, so as to obtain a device pattern conforming to the pattern of the lithography mask plate,
• wherein the photosensitive layer is composed of layers of materials, an arrangement of the layers in the photosensitive layer an alternate arrangement as high refractive index/low refractive index/high refractive index, to form a resonant cavity structure,
• wherein the pattern of the lithography mask plate is recorded in the photosensitive layer irradiated by the first light source by light field imaging, in response to a distance between the lithography mask plate and the photosensitive layer belonging to a near-field interval less than a wavelength of the first light source.