Resist composition and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsTeppei Adachi, Shinya Yamashita, Masaki Ohashi, Tomohiro Kobayashi, Kenichi Oikawa, Takayuki Fujiwara
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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsTeppei Adachi, Shinya Yamashita, Masaki Ohashi, Tomohiro Kobayashi, Kenichi Oikawa, Takayuki Fujiwara
Estimating the term…
A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.
A resist composition comprising:
A resist composition comprising:
A patterning process comprising the steps of:
Dependencies are inferred from the claim text.