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US 11,693,169 B2Granted
Silicon photonics collimator for wafer level assembly
AssigneeMellanox Technologies, Ltd.
InventorsAvner Badihi, Henning Lysdal
Life of this patent
Estimating the term…
Abstract
Embodiments are disclosed for providing a silicon photonics collimator for wafer level assembly. An example apparatus includes a silicon photonics (SiP) device and a micro-optical passive element. The SiP device comprises a set of optical waveguides. The micro-optical passive element is mounted on an edge of a cavity etched into a silicon surface of the SiP device. Furthermore, the micro-optical passive element is configured to direct optical signals between the set of optical waveguides and an external optical element.
Claims20
An apparatus comprising:
- a wafer;
- a first silicon photonics (SiP) device that comprises a set of optical waveguides formed at least partially in the wafer;
- a first cavity etched into a silicon surface of the wafer;
- and
- a first micro-optical passive element mounted on an edge of the first cavity prior to dicing of the wafer to form the first SiP device,
- wherein the first micro-optical passive element is configured to direct optical signals therethrough between the set of optical waveguides and an external optical element.
3 more elements
A method, comprising:
- etching a first cavity into a silicon wafer associated with a set of optical waveguides;
- mounting a first micro-optical passive element onto an edge of the first cavity, wherein the first micro-optical passive element is configured to direct optical signals therethrough between the set of optical waveguides and an external optical element;
- and
- following mounting of the first micro-optical passive element, dicing the silicon wafer to form a first optical apparatus that comprises the first micro-optical passive element.
1 more element
An apparatus comprising:
- a wafer;
- a first silicon photonics (SiP) device that comprises a set of optical waveguides formed at least partially in the wafer;
- a first cavity etched into a silicon surface of the wafer;
- a first micro-optical passive element mounted on an edge of the first cavity, wherein the first micro-optical passive element is configured to direct optical signals therethrough between the set of optical waveguides and a first external optical element;
- a second SiP device that comprises a set of optical waveguides formed at least partially in the wafer;
- a second cavity etched into the silicon surface of the wafer;
- and
- a second micro-optical passive element mounted on an edge of the second cavity, wherein the second micro-optical passive element is configured to direct optical signals therethrough between the set of optical waveguides and a second external optical element.
5 more elements
Dependencies are inferred from the claim text.