Exchange-coupled film and magnetoresistive element and magnetic sensing device including the same
AssigneeAlps Alpine Co., Ltd.
InventorsMasamichi Saito, Fumihito Koike
Life of this patent
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Abstract
An exchange-coupled film includes a antiferromagnetic layer and a pinned magnetic layer including a ferromagnetic layer stacked together, the antiferromagnetic layer having a structure including an IrMn layer, a first PtMn layer, a PtCr layer, and a second PtMn layer stacked in that order, the IrMn layer being in contact with the pinned magnetic layer. The second PtMn layer preferably has a thickness of more than 0 Å and less than 60 Å, in some cases. The PtCr layer preferably has a thickness of 100 Å or more, in some cases. The antiferromagnetic layer preferably has a total thickness of 200 Å or less, in some cases.
Claims14
An exchange-coupled film, comprising:
- an antiferromagnetic layer and a ferromagnetic layer stacked together,
- the antiferromagnetic layer having a structure including an IrMn layer, a first PtMn layer, a PtCr layer, and a second PtMn layer stacked in that order, the IrMn layer being adjacent to the ferromagnetic layer.
An exchange-coupled film, comprising:
- an antiferromagnetic layer and a ferromagnetic layer stacked together,
- the antiferromagnetic layer having a structure including a first PtMn layer, a PtCr layer, and a second PtMn layer stacked in that order, the first PtMn layer being adjacent to the ferromagnetic layer, a thickness of the PtCr layer being larger than any of a thickness of the first PtMn layer and a thickness of the second PtMn layer.
A magnetoresistive element, comprising:
- an exchange-coupled film, comprising:
- an antiferromagnetic layer and a ferromagnetic layer stacked together, the antiferromagnetic layer having a structure including an IrMn layer, a first PtMn layer, a PtCr layer, and a second PtMn layer stacked in that order, the IrMn layer being close to the ferromagnetic layer;
- and
- a free magnetic layer stacked together, the ferromagnetic layer of the exchange-coupled film being included in at least part of a pinned magnetic layer.
A magnetic sensor, comprising:
- a magnetoresistive element, comprising:
- an exchange-coupled film, comprising:
- an antiferromagnetic layer and a ferromagnetic layer stacked together, the antiferromagnetic layer having a structure including an IrMn layer, a first PtMn layer, a PtCr layer, and a second PtMn layer stacked in that order, the IrMn layer being close to the ferromagnetic layer;
- and
- a free magnetic layer stacked together, the ferromagnetic layer of the exchange-coupled film being included in at least part of a pinned magnetic layer;
- and
- a power supply that supplies a power supply voltage to the magnetoresistive element.
Dependencies are inferred from the claim text.