Method of inspecting silicon carbide semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsMakoto Utsumi, Masaki Miyazato
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AssigneeFuji Electric Co., Ltd.
InventorsMakoto Utsumi, Masaki Miyazato
Estimating the term…
A body diode is energized by inputting a BD energization pulse signal having a predetermined cycle. At the start of energization of the body diode and immediately before termination thereof, an ON signal of a Von measurement pulse signal is input to a high-temperature semiconductor chip at a timing different from that of an ON signal of the BD energization pulse signal, thereby passing a drain-source current through a MOSFET, and a drain-source voltage is measured. Thereafter, energization of the body diode is terminated. At room temperature before and after the energization of the body diode, the drain-source voltage is measured by inputting the ON signal of the Von measurement pulse signal. A semiconductor chip for which a fluctuation amount of the drain-source voltage at a high temperature and a fluctuation amount of the drain-source voltage at room temperature are within predetermined ranges is determined to be a conforming product.
A method of inspecting a silicon carbide semiconductor device having a semiconductor chip containing silicon carbide;
Dependencies are inferred from the claim text.