Probe device, test device, and test method for semiconductor device

A test device, comprising:

• a probe device configured to contact an output pad of a semiconductor device configured to output a multi-level signal having M levels, where M is a natural number greater than 2;
• and
• a control device configured to receive the multi-level signal from the probe device and test the semiconductor device using the multi-level signal,
• wherein the probe device comprises a resistor circuit having:
• a first receiving terminal configured to receive the multi-level signal,
• a second receiving terminal configured to receive a reference signal, and
• a plurality of resistors connected to the first receiving terminal and the second receiving terminal, and
• wherein the control device is configured to determine a resistance value of the resistor circuit, as a termination resistance value for testing the multi-level signal.

A test method for a semiconductor device, the test method comprising:

• contacting a first pin and a second pin of a probe device to a signal pad and a ground pad of the semiconductor device;
• setting a resistance value of each of a plurality of variable resistors, in the probe device, connected to the first pin and the second pin according to a termination mode of the semiconductor device;
• supplying a power voltage to the semiconductor device;
• and
• verifying a multi-level signal output from the signal pad by the semiconductor device,
• wherein the multi-level signal is a pulse amplitude-modulation signal having M levels, where M is a natural number greater than 2.