Plasma induced modification of silicon carbide surface
AssigneeApplied Materials, Inc.
InventorsFrancis Kanyiri Mungai, Vijayabhaskara Venkatagiriyappa, Yung-Cheng Hsu, Keiichi Tanaka, Mario D. Silvetti, Mihaela A. Balseanu
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Abstract
Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.
Claims15
A method of increasing hydrophilicity of a silicon carbide (SiC) susceptor surface, the method comprising exposing the silicon carbide susceptor surface to an atmospheric plasma to create a treated surface having a water contact angle in the range of 0° to 5°, the atmospheric plasma generated inside and expelled from a nozzle positioned adjacent to and spaced a distance in the range of from 2 mm to 15 mm from the silicon carbide susceptor surface, the nozzle comprising an anode, a cathode, a gas inlet, a gas flow path and a plasma outlet, the gas flow path separating the anode from the cathode so that a plasma is generated in the gas flow path prior to exiting the plasma outlet.
A method of increasing hydrophilicity of a silicon carbide (SiC) surface, the method comprising exposing the silicon carbide surface to an atmospheric plasma comprising oxygen and nitrogen in a ratio in the range of 20:80 to 24:76, wherein exposing the silicon carbide surface to the atmospheric plasma creates a surface with a water contact angle in the range of 0° to 5°.
Dependencies are inferred from the claim text.