SiC chemical vapor deposition apparatus

A SiC chemical vapor deposition apparatus comprising:

• a furnace body inside of which a growth space is formed;
• a placement table which is positioned in the growth space and has a placement surface on which a SiC wafer is placed;
• and
• two gas supply sources connected to the furnace body, wherein the two gas supply sources are a raw material gas supply source and an inert gas supply source,
• wherein the furnace body comprises
• a first hole which is positioned on an upper portion which faces the placement surface, wherein the first hole is connected with the raw material gas supply source to supply a raw material gas and generate a SiC epitaxial film in the growth space,
• a second hole which is positioned on a side wall of the furnace body, wherein the second hole is not connected with the raw material gas supply source but is connected with the inert gas supply source to supply an inert gas,
• a third hole which is positioned on the side wall of the furnace body at a lower position than the second hole and discharges the gases included in the growth space, and
• a protrusion which protrudes towards the growth space from a lower end of the second hole to adjust a flow of the raw material gas,
• wherein
• a flow direction of the inert gas which is supplied from the second hole is mainly a direction along the protrusion, and
• a flow of the inert gas includes a flow which flows upwards along the side wall to prevent generation of deposits which are caused on the side wall by the raw material gas, and
• wherein the furnace body includes a first portion, a second portion, and a third portion from above,
• an inner diameter of the first portion is smaller than an inner diameter of the third portion,
• the second portion bonds the first portion and the third portion to each other,
• the first hole is positioned in the first portion,
• the second hole and the protrusion are positioned in the second portion, and
• the third hole is positioned in the third portion, and
• wherein the lower end of the second hole directly connects to an upper surface of the protrusion.