Method for producing InP quantum dot precursor and method for producing InP-based quantum dot
AssigneeNippon Chemical Industrial Co., Ltd.
InventorsKazuhiro Nakatsui, Taiki Tsuzukiishi, Tomo Sakanoue
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Abstract
The present invention relates to a method for producing an InP-based quantum dot precursor from a phosphorus source and an indium source, in which a silylphosphine compound represented by the following Formula (1) with a content of a compound represented by the following Formula (2) of 0.3 mol % or less is used as the phosphorus source. Further, the present invention provides a method for producing an InP-based quantum dot comprising heating an InP quantum dot precursor to a temperature of 200° C. or more and 350° C. or less to obtain an InP quantum dot. (R is as defined in the specification.)
Claims18
A method for producing an InP quantum dot precursor from a phosphorus source and an indium source, wherein a silylphosphine compound represented by the following Formula (1) with a content of a compound represented by the following Formula (2) of 0.3 mol % or less:
- wherein each R is independently an alkyl group having 1 or more and 5 or less carbon atoms or an aryl group having 6 or more and 10 or less carbon atoms,
- wherein R is the same as in Formula (1)
- is used as the phosphorus source.
Dependencies are inferred from the claim text.