Pore formation in a substrate

A substrate comprising:

• a buried oxide layer;
• a device layer disposed on the buried oxide layer;
• a plurality of topside features formed through the device layer;
• a plurality of backside features formed through at least the buried oxide layer;
• a nanopore connecting each of the plurality of topside features to each of the plurality of backside features;
• and
• a dielectric material formed over a surface of the device layer and within the nanopore and between the topside features and the backside features.

A substrate comprising:

• a buried oxide layer;
• a device layer disposed on the buried oxide layer;
• a plurality of topside features formed through the device layer, the plurality of topside features being frustum-shaped etch pits;
• a plurality of backside features formed through at least the buried oxide layer, wherein the plurality of backside features are trenches, each of the of the plurality of topside features being aligned to each of the plurality of backside features;
• a nanopore connecting each of the plurality of topside features to each of the plurality of backside features;
• and
• a dielectric material formed over sidewalls of the frustum-shaped etch pits and within the nanopore and between the topside features and the backside features.