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US 11,691,870 B2Granted
Semiconductor device including a microelectromechanical structure and an associated integrated electronic circuit
AssigneeSTMicroelectronics S.r.l.
InventorsAlessandro Tocchio, Lorenzo Corso
Life of this patent
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Abstract
An integrated semiconductor device includes: a MEMS structure; an ASIC electronic circuit; and conductive interconnection structures electrically coupling the MEMS structure to the ASIC electronic circuit. The MEMS structure and the ASIC electronic circuit are integrated starting from a same substrate including semiconductor material; wherein the MEMS structure is formed at a first surface of the substrate, and the ASIC electronic circuit is formed at a second surface of the substrate, vertically opposite to the first surface in a direction transverse to a horizontal plane of extension of the first surface and of the second surface.
Claims20
An integrated inertial sensor, comprising:
- a substrate including semiconductor material;
- a microelectromechanical system (MEMS) structure at a first surface of the substrate, the MEMS structure including a suspended inertial mass;
- an application-specific integrated circuit (ASIC) electronic circuit electrically coupled to the MEMS structure, at a second surface of the substrate, and opposite to the first surface in a direction transverse to respective planes of extension of the first surface and the second surface;
- electrically conductive interconnection structures extending through the substrate and having a first end at the first surface and a second end at the second surface, the interconnection structures electrically coupling the MEMS structure to the ASIC electronic circuit, and each interconnection structure includes a conductive connection portion surrounded by an insulation structure that electrically insulates the conductive connection portion from the substrate, the insulation structure has a ring conformation and includes a conductive core and an insulating coating that encloses the conductive core and electrically insulates the conductive core from the conductive connection portion, the conductive core and insulating coating together forming an insulation capacitor that electrically insulates the conductive connection portion from the substrate;
- a covering coupled to the MEMS structure;
- and
- a supporting layer coupled to the covering.
4 more elements
An integrated inertial sensor, comprising:
- a substrate having a first surface and a second surface opposite to the first surface;
- a microelectromechanical system (MEMS) structure on the first surface of the substrate, the MEMS structure having a suspended inertial mass;
- an application-specific integrated circuit (ASIC) electrically coupled to the MEMS structure and on the second surface of the substrate;
- a first contact pad on the ASIC being in electrical communication with the ASIC;
- electrically conductive interconnection structures extending from the first surface to the second surface through the substrate electrically coupling the MEMS structure to the ASIC;
- a covering coupled to the MEMS structure;
- a supporting layer coupled to the covering;
- a second contact pad on the supporting layer;
- a molding compound on the supporting layer, on the first contact pad, and on the second contact pad;
- and
- a bonding wire extending through a molding compound layer and electrically coupling the first contact pad to the second contact pad.
8 more elements
An integrated inertial sensor, comprising:
- a substrate having a first surface, a second surface opposite to the first surface, and a first sidewall transverse to the first and second surfaces;
- a microelectromechanical system (MEMS) structure on the first surface of the substrate, the MEMS structure having a second sidewall transverse to the first and second surfaces and the second sidewall being substantially flush with the first sidewall, the MEMS structure having a suspended inertial mass;
- a covering coupled to the MEMS structure and spaced apart from the first surface of the substrate by the MEMS structure;
- a supporting layer coupled to the covering, the supporting layer including a first contact pad;
- an application-specific integrated circuit (ASIC) electrically coupled to the MEMS structure and on the second surface of the substrate, the ASIC having a third sidewall transverse to the first and second surfaces and the third sidewall being substantially flush with the first sidewall, the ASIC including a second contact pad facing away from the substrate;
- an anchorage element extending from the MEMS structure to the first surface of the substrate, the anchorage element coupling the MEMS structure to the substrate, the anchorage element having a fourth sidewall substantially flush with the first sidewall;
- and
- a bonding wire coupling the first contact pad to the second contact pad.
5 more elements
Dependencies are inferred from the claim text.