Method for cleaning substrate

A method for cleaning a substrate, comprising:

• receiving a photomask substrate with a phase-shifting layer disposed over a surface of the photomask substrate and a shielding layer disposed on the phase-shifting layer, wherein the photomask substrate has a plurality of conductive nanoparticles disposed over the surface of the photomask substrate;
• applying a first mixture comprising an SCl solution, deionized (DI) water, and ozone (O3) to the substrate to remove the conductive nanoparticles;
• and
• applying a second mixture to the photomask substrate, wherein the second mixture comprises DI water and H2, and a temperature of the second mixture is between approximately 20° C. and 40° C.,
• wherein the applying of the second mixture further comprises a mega sonic agitation, and a frequency of the mega sonic agitation is greater than 3 MHz,
• wherein a flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min, a flow rate of the second mixture is between approximately 1000 ml/min and approximately 3000 ml/min.

A method for cleaning a substrate, comprising:

• receiving a semiconductor substrate having a surface and a plurality of patterns disposed on the surface, wherein the semiconductor substrate has a plurality of conductive nanoparticles disposed over the surface of the semiconductor substrate;
• applying a first mixture comprising an SCl solution, deionized (DI) water, and ozone (O3) to the semiconductor substrate to remove the conductive nanoparticles;
• and
• applying a second mixture to the semiconductor substrate, wherein the second mixture comprises DI water and H2, and a temperature of the second mixture is between approximately 20° C. and 40° C.,
• wherein the applying of the second mixture further comprises a mega sonic agitation, and a frequency of the mega sonic agitation is greater than 3 MHz,
• wherein a flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min, a flow rate of the second mixture is between approximately 1000 ml/min and approximately 3000 ml/min.