Phase change memory cell with an airgap to allow for the expansion and restriction of the PCM material

A phase change memory (PCM) cell comprising:

• a first electrode located on a substrate;
• a phase change material layer located adjacent to the first electrode, wherein a first side of the phase change material layer is in direct contact with the first electrode;
• a second electrode located adjacent to phase change material layer, wherein the second electrode is in direct contact with a second side of the phase change material layer, wherein the first side and the second side are different sides of the phase change material layer;
• and
• an airgap located directly above the phase change material layer, wherein the airgap provides space for the phase change material to expand or restrict, and wherein the phase change material is located entirely beneath the airgap.