Magnesium ion based synaptic device
AssigneeInternational Business Machines Corporation
InventorsDouglas M. Bishop, Martin Michael Frank, Teodor Krassimirov Todorov
Life of this patent
Estimating the term…
Abstract
A method of fabricating a synaptic device is provided. The method includes forming a channel layer between a first terminal and a second terminal. The channel layer varies in resistance based on a magnesium concentration in the channel layer. The method further includes forming an electrolyte layer. The electrolyte layer includes a magnesium ion conductive material. A third terminal is formed over the electrolyte layer and applies a signal to the electrolyte layer and the channel layer.
Claims20
A synaptic device, comprising:
- a channel layer disposed between a first terminal and a second terminal in a stacked configuration, wherein the channel layer is configured to vary in resistance based on a magnesium concentration in the channel layer;
- an electrolyte layer disposed on the channel layer and configured to conduct magnesium ions with the channel layer in accordance with an applied input signal;
- and
- a third terminal disposed on the electrolyte layer and configured to apply a signal to the electrolyte layer.
An integrated circuit, comprising:
- one or more semiconductor structures, wherein at least one of the one or more semiconductor structures comprises:
- a channel layer disposed between a first terminal and a second terminal in a stacked configuration, wherein the channel layer is configured to vary in resistance based on a magnesium concentration in the channel layer;
- an electrolyte layer disposed on the channel layer and configured to conduct magnesium ions with the channel layer in accordance with an applied input signal;
- and
- a third terminal disposed on the electrolyte layer and configured to apply a signal to the electrolyte layer.
A method, comprising:
- forming a channel layer between a first terminal and a second terminal in a stacked configuration, wherein the channel layer varies in resistance based on a magnesium concentration in the channel layer;
- forming an electrolyte layer on the channel layer;
- and
- forming a third terminal on the electrolyte layer for applying a signal to the electrolyte layer.
Dependencies are inferred from the claim text.