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US 11,690,303 B2Granted
Electronic chip with two phase change memories
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsRemy Berthelon, Franck Arnaud
Life of this patent
Estimating the term…
Abstract
An electronic chip includes at least a first array of first elementary cells and a second array of second elementary cells. The first and second elementary cells form two types of phase change memory having a storage element formed by a volume of phase change material having either a crystalline state or an amorphous state depending on the bit stored. Each first elementary cell includes a volume of a first phase change material, and each second elementary cell includes a volume of a second phase change material that is different from the first material. Each elementary cell includes a heating connector configured for the passage of a heating current adapted to cause a phase change of the volume of phase change material of the elementary cell.
Claims21
An electronic chip, comprising:
- a first array of first elementary cells and a second array of second elementary cells, each first elementary cell and each second elementary cell storing at least one data bit in a storage element having a state dependent on the bit stored, wherein:
- the first array of first elementary cells includes a first type of phase change material and the second array of second elementary cells includes a second type of phase change material that is different from the first type;
- the storage element is formed by a volume of phase change material configured to have either a crystalline state or an amorphous state depending on the bit stored;
- each first elementary cell includes a volume of a first phase change material;
- each second elementary cell includes a volume of a second phase change material, different from the first phase change material, the second phase change material having either a crystalline state or an amorphous state depending on the bit stored;
- each first elementary cell and second elementary cell includes a metal contact;
- and
- each first elementary cell and second elementary cell includes a heating connector configured to pass a heating current to cause a phase change of the volume of phase change material of each first elementary cell and each second elementary cell, the heating connectors of each first and second elementary cell are L-shaped with an angle greater than 90° and coupled to both the metal contact and the volume of phase change material.
5 more elements
A device, comprising:
- an array of first memory cells, each of the first memory cells including:
- a first metal contact;
- a first phase change material;
- a first conductor on a first surface of the first phase change material;
- and
- an L-shaped heating element coupled to a second surface of the first phase change material that is opposite the first surface and coupled to the first metal contact, an angle of the L-shape being greater than 90°;
- and
- an array of second memory cells, each of the second memory cells including:
- a second metal contact;
- a second phase change material that is different from the first phase change material;
- a second conductor on a first surface of the second phase change material;
- and
- an L-shaped heating element coupled to a second surface of the second phase change material that is opposite the first surface and coupled to the second metal contact, the angle of the L-shape being greater than 90°,
- wherein the second phase change material has a melting temperature that is lower than a melting temperature of the first phase change material.
11 more elements
A structure, comprising:
- a first conductor;
- a first L-shaped heating connector over the first conductor, the first heating connector including a first phase change material;
- a first layer of second phase change material over the first heating connector, the second phase change material different from the first phase change material;
- a first upper heating connector over the first layer of the second phase change material;
- a second conductor;
- a second L-shaped heating connector over the second conductor, the second heating connector including a conductive material;
- a second layer of the second phase change material over the second conductor;
- and
- a second upper heating connector over the second layer of the second phase change material.
6 more elements
A device, comprising:
- an array of first memory cells, each of the first memory cells including:
- a first phase change material;
- a conductor on a first surface of the first phase change material;
- and
- a heating element contacting a second surface of the first phase change material that is opposite the first surface;
- and
- an array of second memory cells, each of the second memory cells including:
- a second phase change material;
- a conductor on a first surface of the second phase change material;
- and
- a heating element contacting a second surface of the second phase change material that is opposite the first surface,
- wherein the second phase change material has a melting temperature that is at least 80° C. less than a melting temperature of the first phase change material.
9 more elements
A structure, comprising:
- a first conductor;
- a first heating connector over the first conductor, the first heating connector including a first phase change material;
- a layer of second phase change material over the first heating connector, the second phase change material different from the first phase change material and configured to have either a crystalline state or an amorphous state;
- a second heating connector over the layer of the second phase change material;
- and
- a third heating connector at a same level as the first heating connector, the third heating connector being a conductive material.
3 more elements
Dependencies are inferred from the claim text.