Quantum computing devices with an increased channel mobility
AssigneeMicrosoft Technology Licensing, LLC
InventorsMaja C. Cassidy, Sebastian J. Pauka, Cioffi Nicole Allen
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Abstract
Methods related to the treatment of a quantum computing device to increase channel mobility are described. An example method includes forming a superconducting metal layer on a surface of a wafer. The method further includes selectively removing a portion of the superconducting metal layer to allow a subsequent formation of a gate dielectric associated with the device, where the selectively removing causes a decrease in channel mobility associated with the quantum computing device. The method further includes prior to forming the gate dielectric, subjecting the wafer to a plasma treatment, where a set of parameters associated with the plasma treatment is selected to increase the channel mobility.
Claims20
A topological quantum computing device comprising:
- a quantum well formed in a substrate;
- a superconducting metal layer formed on a surface of the substrate;
- and
- a gate dielectric formed over the superconducting metal layer after selectively removing a portion of the superconducting metal layer to define a topologically active area of the topological quantum computing device, wherein the gate dielectric is formed after subjecting the substrate to a plasma treatment, wherein a set of parameters associated with the plasma treatment is selected to both increase channel mobility of a channel adjacent to the quantum well associated with the topological quantum computing device and increase a density of electrons within the quantum well, and wherein the plasma treatment further results in a formation of a clean semiconductor-dielectric interface between the topologically active area of the topological quantum computing device and a topologically inactive area of the topological quantum computing device.
A topological quantum computing device comprising:
- a topologically active area formed in a substrate by selectively removing a portion of a superconducting metal layer formed over a semiconductor layer, wherein a removal of the portion of the superconducting metal layer exposes a portion of the semiconductor layer to form an exposed portion;
- and
- a gate, formed over the exposed portion of the semiconductor layer, wherein the gate comprises a gate dielectric formed over at least the exposed portion of the semiconductor layer, wherein the gate dielectric is formed after subjecting the substrate to a plasma treatment, wherein a set of parameters associated with the plasma treatment is selected to both increase channel mobility of a channel adjacent to the topologically active area and increase a density of electrons within the topologically active area, and wherein the plasma treatment further results in a formation of a clean semiconductor-dielectric interface between the topologically active area and a topologically inactive area of the topological quantum computing device.
A topological quantum computing device comprising:
- a quantum well formed in a substrate by selectively removing a portion of a superconducting metal layer formed over a semiconductor layer, wherein a removal of the portion of the superconducting metal layer exposes a portion of the semiconductor layer to form an exposed portion;
- and
- a gate, formed over the exposed portion of the semiconductor layer, wherein the gate comprises a gate dielectric formed over at least the exposed portion of the semiconductor layer, wherein the gate dielectric is formed after subjecting the substrate to a plasma treatment, wherein a set of parameters associated with the plasma treatment is selected to both increase channel mobility of a channel adjacent to the quantum well and increase a density of electrons within the quantum well, and wherein the plasma treatment further results in a formation of a clean semiconductor-dielectric interface between the quantum well and a topologically inactive area of the topological quantum computing device.
Dependencies are inferred from the claim text.