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US 11,690,299 B2Granted
Magnetoresistance effect element and magnetic memory
AssigneeTohoku University
InventorsHideo Sato, Shinya Ishikawa, Shunsuke Fukami, Hideo Ohno, Tetsuo Endoh
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Abstract
Provided is an X-type 3-terminal STT-MRAM (spin orbital torque magnetization reversal component) having a high thermal stability index Δ and a low writing current IC in a balanced manner. A magnetoresistance effect element has a configuration of channel layer (1)/barrier layer non adjacent magnetic layer (2b)/barrier layer adjacent magnetic layer (2a)/barrier layer (3).
Claims9
A magnetoresistance effect element, comprising:
- a channel layer,
- a recording layer disposed adjacent to said channel layer, and including a ferromagnetic substance, and
- a barrier layer disposed adjacent to said recording layer on an opposite side thereof to said channel layer, and constituted by an insulator,
- wherein said recording layer has at least two or more magnetic layers including films having different magnetic characteristics,
- wherein said two or more magnetic layers consist of one barrier-layer-adjacent-magnetic-layer disposed adjacent to said barrier layer, and one or more barrier-layer-non-adjacent-magnetic-layers that are not adjacent to said barrier layer,
- wherein the barrier-layer-adjacent-magnetic-layer and the barrier-layer-non-adjacent-magnetic-layers are magnetically bonded, and a magnetization direction of both of said barrier-layer-adjacent-magnetic-layer and said barrier-layer-non-adjacent-magnetic-layers is in parallel with a film surface, is variable, and is made reversal in a same direction,
- wherein a current in a direction substantially in parallel with said recording layer is introduced to said channel layer, thereby making a magnetization direction of said recording layer reversal,
- wherein said barrier-layer-non-adjacent-magnetic-layer is constituted by a magnetic material film made of a Co film serving as an in-plane axis of easy magnetization, and
- wherein an axis of easy magnetization of said recording layer is in a direction at within ±45° with respect to a direction of said current.
6 more elements
A magnetoresistance effect element, comprising:
- a channel layer,
- a recording layer disposed adjacent to said channel layer, and including a ferromagnetic, and
- a barrier layer disposed adjacent to said recording layer on an opposite side thereof to said channel layer, and including an insulator,
- wherein said recording layer has at least two or more magnetic layers including films having different magnetic characteristics,
- wherein said two or more magnetic layers consists of one barrier-layer-adjacent-magnetic-layer disposed adjacent to said barrier layer, and one or more barrier-layer-non-adjacent-magnetic-layers not adjacent to said barrier layer,
- wherein the barrier-layer-adjacent-magnetic-layer and the barrier-layer-non-adjacent-magnetic-layers are magnetically bonded, and a magnetization direction of both of said barrier-layer-adjacent-magnetic-layer and said barrier-layer-non-adjacent-magnetic-layers is in parallel with a film surface, is variable, and is made reversal in a same direction,
- wherein a current in a direction substantially in parallel with said recording layer is introduced to said channel layer, thereby making a magnetization direction of said recording layer reversal,
- wherein said at least one or more barrier-layer-non-adjacent-magnetic-layers is constituted by a magnetic material film made of a Co film serving as an in-plane axis of easy magnetization, and
- wherein an axis of easy magnetization of said recording layer is in a direction at within ±45° with respect to a direction of said current.
6 more elements
Dependencies are inferred from the claim text.