Magnetic memory structure and device
AssigneeYangtze Memory Technologies Co., Ltd.
InventorDan Yu
Life of this patent
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Abstract
Magnetic memory structure and memory device are provided. A magnetic memory structure includes a metal layer, a first magnetic tunnel junction, and a second magnetic tunnel junction. The metal layer includes a first contact region and a second contact region. Electrical resistivity of at least a first part of the first contact region is different than electrical resistivity of the second contact region. The first magnetic tunnel junction is disposed on the metal layer. The first magnetic tunnel junction includes a first free layer in contact with the first contact region of the metal layer. The second magnetic tunnel junction is disposed on the metal layer. The second magnetic tunnel junction includes a second free layer in contact with the second contact region of the metal layer.
Claims20
A magnetic memory structure, comprising:
- a metal layer, including a first contact region and a second contact region, wherein electrical resistivity of at least a first part of the first contact region is different than electrical resistivity of the second contact region;
- a first magnetic tunnel junction (MTJ), disposed on the metal layer, wherein the first MTJ includes a first free layer in contact with the first contact region of the metal layer;
- and
- a second magnetic tunnel junction (MTJ), disposed on the metal layer, wherein the second MTJ includes a second free layer in contact with the second contact region of the metal layer.
A memory device, comprising:
- a substrate;
- an array of a memory structure on the substrate, the memory structure including:
- a metal layer, including a first contact region and a second contact region, wherein electrical resistivity of at least a first part of the first contact region is different than electrical resistivity of the second contact region,
- a first magnetic tunnel junction (MTJ), disposed on the metal layer, wherein the first MTJ includes a first free layer in contact with the first contact region of the metal layer, and
- a second magnetic tunnel junction (MTJ), disposed on the metal layer, wherein the second MTJ includes a second free layer in contact with the second contact region of the metal layer;
- and
- a control circuitry, electrically coupled with the array of the memory structure.
A magnetic memory structure, comprising:
- a metal layer, including a first contact region, a second contact region, and a first portion, wherein the first portion is connected to a side of the first contact region and has electrical resistivity different than the first contact region and/or the second contact region;
- a first magnetic tunnel junction (MTJ), disposed on the metal layer, wherein the first MTJ includes a first free layer in contact with the first contact region of the metal layer;
- and
- a second magnetic tunnel junction (MTJ) disposed on the metal layer, wherein the second MTJ includes a second free layer in contact with the second contact region of the metal layer.
Dependencies are inferred from the claim text.