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US 11,690,293 B2Granted
Photoelectric conversion element and solid-state imaging device
AssigneeSony Semiconductor Solutions Corporation
InventorsYuki Negishi, Osamu Enoki, Yuta Hasegawa
Life of this patent
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Abstract
A photoelectric conversion element of the present disclosure includes a first electrode, a second electrode disposed to be opposed to the first electrode, and an organic photoelectric conversion layer provided between the first electrode and the second electrode and including at least one of a Chryseno[1,2-b:8,7-b′]dithiophene (ChDT1) derivative represented by the general formula (1) or a Chryseno[1,2-b:7,8-b′]dithiophene (ChDT2) derivative represented by the general formula (2).
Claims11
A photoelectric conversion element, comprising:
- a semiconductor substrate;
- a first electrode on the semiconductor substrate;
- a second electrode opposite to the first electrode;
- and
- an organic photoelectric conversion layer between the first electrode and the second electrode and including at least one of a Chryseno[1,2-b:8,7-b′]dithiophene (ChDT1) derivative represented by the following general formula (1) or a Chryseno[1,2-b:7,8-b′]dithiophene (ChDT2) derivative represented by the following general formula (2)
- wherein R1 to R4 denote, each independently, one of a hydrogen atom, a halogen atom, an aromatic hydrocarbon group having 6 to 60 carbon atoms, an aromatic heterocyclic group having 3 to 30 carbon atoms, a haloalkyl group having 1 to 30 carbon atoms, an alkylamino group having 1 to 30 carbon atoms, a dialkylamino group having 2 to 60 carbon atoms, an alkyl sulfonyl group having 1 to 30 carbon atoms, a haloalkyl sulfonyl group having 1 to 3 carbon atoms, an alkylsilyl group having 3 to 30 carbon atoms, an alkylsilylacetylene group having 5 to 60 carbon atoms, a cyano group, or a derivative thereof, and
- a molecular structure of a mother skeleton of the at least one of the ChDT1 derivative or the ChDT2 derivative is oriented in a horizontal direction with respect to the semiconductor substrate.
4 more elements
A solid-state imaging device, comprising:
- a semiconductor substrate;
- and
- a plurality of pixels, wherein
- each of the plurality of pixels includes at least one organic photoelectric conversion section on the semiconductor substrate, and
- the at least one organic photoelectric conversion section includes:
- a first electrode;
- a second electrode opposite to the first electrode;
- and
- an organic photoelectric conversion layer between the first electrode and the second electrode and including at least one of a Chryseno[1,2-b:8,7-b′]dithiophene (ChDT1) derivative represented by the following general formula (1) or a Chryseno[1,2-b:7,8-b′]dithiophene (ChDT2) derivative represented by the following general formula (2)
- wherein R1 to R4 denote, each independently, one of a hydrogen atom, a halogen atom, an aromatic hydrocarbon group having 6 to 60 carbon atoms, an aromatic heterocyclic group having 3 to 30 carbon atoms, a haloalkyl group having 1 to 30 carbon atoms, an alkylamino group having 1 to 30 carbon atoms, a dialkylamino group having 2 to 60 carbon atoms, an alkyl sulfonyl group having 1 to 30 carbon atoms, a haloalkyl sulfonyl group having 1 to 3 carbon atoms, an alkylsilyl group having 3 to 30 carbon atoms, an alkylsilylacetylene group having 5 to 60 carbon atoms, a cyano group, or a derivative thereof, and
- a molecular structure of a mother skeleton of the at least one of the ChDT1 derivative or the ChDT2 derivative is oriented in a horizontal direction with respect to the semiconductor substrate.
8 more elements
Dependencies are inferred from the claim text.