Semiconductor data storage devices and methods of fabricating the same

A method of fabricating a semiconductor device, the method comprising:

• providing a substrate that includes a first region and a second region;
• forming a first lower conductive pattern on the first region and a second lower conductive pattern on the second region, the first lower conductive pattern and the second lower conductive pattern being buried in an interlayer dielectric layer on the substrate;
• forming a capping layer and a dummy layer on the capping layer, the capping layer covering the interlayer dielectric layer on the second region;
• forming a conductive layer and a magnetic tunnel junction layer on the conductive layer, the conductive layer covering the interlayer dielectric layer on the first region and the dummy layer on the second region;
• performing a first etching process on the magnetic tunnel junction layer to form a memory cell;
• forming a protective layer that covers a lateral surface of the memory cell;
• performing a second etching process on the protective layer and the conductive layer at one side of the memory cell, the second etching process forming an inner protective layer on the lateral surface of the memory cell and a first bottom electrode between the first lower conductive pattern and the memory cell;
• and
• forming an outer protective layer that covers an outer surface of the inner protective layer, a top surface of the interlayer dielectric layer exposed by the second etching process, and the second region.