Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, the method comprising:

• forming a first stacked structure including first material layers and second material layers formed alternately with each other;
• forming first semiconductor patterns passing through the first stacked structure;
• forming a sacrificial pattern over the first semiconductor patterns;
• forming a second stacked structure over the sacrificial pattern and the first stacked structure, wherein the second stacked structure includes third material layers and fourth material layers formed alternately with each other;
• and
• forming first openings passing through the second stacked structure;
• removing the sacrificial pattern through the first openings to form a second opening;
• forming a multilayer dielectric layer in the first and second openings to fill the second opening;
• forming second semiconductor patterns in the first openings;
• forming a slit passing through the second stacked structure, the multilayer dielectric layer and the first stacked structure;
• removing a portion of the multilayer dielectric layer through the slit to form a third opening;
• and
• forming a coupling pattern in the third opening.

A method of manufacturing a semiconductor device, the method comprising:

• forming a first stacked structure;
• forming a first semiconductor pattern passing through the first stacked structure;
• forming a sacrificial pattern on the first semiconductor pattern;
• forming a second stacked structure over the sacrificial pattern;
• forming a first opening passing through the second stacked structure;
• removing the sacrificial pattern through the first opening to form a second opening;
• forming a dielectric layer in the first opening and the second opening;
• forming a second semiconductor pattern in the first opening;
• forming a slit passing through the second stacked structure, the dielectric layer and the first stacked structure;
• etching the dielectric layer to form a third opening, the third opening exposing the first semiconductor pattern and the second semiconductor pattern;
• and
• forming a coupling pattern in the third opening.

A method of manufacturing a semiconductor device, the method comprising:

• forming a first stacked structure;
• forming a first polysilicon layer passing through the first stacked structure;
• forming a sacrificial pattern on the first polysilicon layer;
• forming a second stacked structure over the sacrificial pattern;
• forming a first opening passing through the second stacked structure;
• removing the sacrificial pattern through the first opening to form a second opening;
• forming a dielectric layer in the first opening and the second opening;
• forming a second polysilicon layer in the first opening;
• forming a slit passing through the second stacked structure, the dielectric layer and the first stacked structure;
• etching the dielectric layer to form a third opening, the third opening exposing the first polysilicon layer and the second polysilicon layer;
• and
• forming a coupling pattern in the third opening.