Charge pump circuit capable of generating voltages in erasing operation, program operation and read operation
AssigneeeMemory Technology Inc.
InventorsWei-Chiang Ong, Tsung-Ta Hsieh, Chih-Yang Huang
Life of this patent
Estimating the term…
Loading patent…
AssigneeeMemory Technology Inc.
InventorsWei-Chiang Ong, Tsung-Ta Hsieh, Chih-Yang Huang
Estimating the term…
A charge pump circuit includes a power switch, a first pull-low circuit, an output pull-low circuit, a first charge pump stage and an output charge pump stage. The power switch receives an enabling signal. The first pull-low circuit and the output pull-low circuit receive a pull-low signal. The first charge pump stage includes a first boost capacitor used to receive a first phase signal, a first transfer transistor, a first gate-control transistor and a first storage capacitor used to receive a second phase signal. The output charge pump stage includes an output boost capacitor used to receive a third phase signal, an output transfer transistor and an output gate-control transistor. The charge pump circuit generates voltages in an erasing operation, a program operation and a read operation according to the enabling signal, the pull-low signal, the first phase signal, the second phase signal and the third phase signal.
A charge pump circuit for generating a first voltage in an erasing operation, a second voltage in a program operation or a third voltage in a read operation, the charge pump circuit comprising:
A charge pump circuit for generating a first voltage in an erasing operation, a second voltage in a program operation and a third voltage in a read operation, the charge pump circuit comprising:
Dependencies are inferred from the claim text.