Antifuse OTP structures with hybrid low-voltage devices
AssigneeZhuhai Chuangfeixin Technology Co., Ltd.
InventorsLi Li, Zhigang Wang
Life of this patent
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Abstract
An antifuse One-Time-Programmable memory cell includes a substrate, and a hybrid select transistor and a hybrid antifuse capacitor formed on the substrate. The hybrid select transistor includes a first gate dielectric layer formed on the substrate, wherein the first gate dielectric layer is thinner than 40 nm, a first high-voltage junction formed in the substrate, and a low-voltage junction formed in the substrate. The hybrid antifuse capacitor includes a second gate dielectric layer, wherein the second gate dielectric layer is thinner than 40 nm, which enables a low-voltage antifuse capacitor device, a second gate formed on the gate dielectric layer, a second high-voltage junction formed in the substrate, and a third high-voltage junction formed in the substrate.
Claims15
An antifuse One-Time-Programmable memory cell, comprising:
- a substrate;
- a hybrid select transistor formed on the substrate, comprising:
- a first gate dielectric layer formed on the substrate, wherein the first gate dielectric layer is thinner than 40 nm, which enables a low-voltage select transistor device;
- a first gate formed on the gate dielectric layer;
- a low-voltage junction formed in the substrate;
- and
- a first high-voltage junction formed in the substrate,
- wherein a source and a drain for the select transistor are formed by the first high-voltage junction and the low-voltage junction;
- and
- a hybrid antifuse capacitor formed on the substrate, comprising:
- a second gate dielectric layer formed on the substrate, wherein the second gate dielectric layer is thinner than 40 nm, which enables a low-voltage antifuse capacitor device;
- a second gate formed on the gate dielectric layer;
- a second high-voltage junction formed in the substrate;
- and
- a third high-voltage junction formed in the substrate,
- wherein a source and a drain for the antifuse capacitor are respectively formed by the second high-voltage junction and the third high-voltage junction,
- wherein the first high-voltage junction in the hybrid select transistor and the second high-voltage junction in the antifuse capacitor are in contact with each other.
Dependencies are inferred from the claim text.