Structure to reduce bending in semiconductor devices
AssigneeMicron Technology, Inc.
InventorsFatma Arzum Simsek-Ege, Clement Jacob
Life of this patent
Estimating the term…
Abstract
An example apparatus includes a first source/drain region and a second source/drain region formed in a substrate. The first source/drain region and the second source/drain region are separated by the channel. The example apparatus further includes a gate separated from the channel by a dielectric material and an access line formed in a high aspect ratio trench connected to the gate. The access line includes a first titanium nitride (TiN) material formed in the trench, a metal material formed over the first TiN material, and a second TiN material formed over the metal material. The example apparatus further includes a sense line coupled to the first source/drain region and a storage node coupled to the second source/drain region.
Claims9
An apparatus, comprising:
- a first source/drain region and a second source/drain region formed in a substrate, wherein the first source/drain region and the second source/drain region are separated by a channel;
- a gate separated from the channel by a dielectric material;
- an access line formed in a trench connected to the gate, wherein the access line includes:
- a first titanium nitride (TiN) material formed in the trench, wherein the first TiN is formed directly on the substrate;
- a metal material formed over the first TiN material;
- and
- a second TiN material formed over the metal material, wherein a top surface of the first TiN material, a top surface of the metal material, and a top surface of the second TiN material are formed to a same height relative to sidewalls of the trench;
- a sense line coupled to the first source/drain region;
- and
- a storage node coupled to the second source/drain region.
A method, comprising:
- forming a first source/drain region and a second source/drain region formed in a substrate material;
- forming a trench in the substrate material;
- forming a channel that separates the first source/drain region and the second source/drain region;
- forming a gate;
- forming a dielectric material that separates the gate from the channel;
- forming an access line in the trench connected to the gate, wherein the access line includes:
- a first titanium nitride (TiN) material formed in the trench, wherein the first TiN material is formed directly on the substrate material;
- a metal material formed over the first TiN material;
- and
- a second TiN material formed over the metal material, wherein a top surface of the first TiN material, a top surface of the metal material, and a top surface of the second TiN material are formed to a same height relative to sidewalls of the trench;
- forming a sense line coupled to the first source/drain region;
- and
- forming a storage node coupled to the second source/drain region.
Dependencies are inferred from the claim text.