Dynamic random access memory and method for manufacturing the same

Abstract

A dynamic random access memory (DRAM) and its manufacturing method are provided. The DRAM includes a buried word line, a bit line, a bit line contact structure, a capacitive contact structure, and an air gap structure. The buried word line is formed in the substrate and extends along a first direction. The bit line is formed on the substrate and extends along a second direction. The bit line contact structure is formed below the bit line. The capacitive contact structure is adjacent to the bit line and surrounded by the air gap structure. The air gap structure includes a first air gap and a second air gap respectively located on a first side and a second side of the capacitive contact structure. The first air gap exposes a shallow trench isolation structure in the substrate. The second air gap exposes a top surface of the substrate.

Dependencies are inferred from the claim text.