5.5 GHz Wi-Fi 5G coexistence acoustic wave resonator RF filter circuit

An RF filter circuit device, the device comprising:

• an input port;
• a first node coupled to the input port;
• a first resonator coupled between the first node and the input port, the first resonator comprising
• a first capacitor device, the first capacitor device comprising a first substrate member, the first substrate member having a first cavity region and a first upper surface region contiguous with a first opening of the first cavity region,
• a first bottom electrode within a portion of the first cavity region,
• a first piezoelectric material overlying the first upper surface region and the first bottom electrode,
• a first top electrode overlying the first piezoelectric material and overlying the first bottom electrode, and
• a first insulating material overlying the first top electrode and configured with a first thickness to tune the first resonator;
• a second node coupled to the first node;
• a second resonator coupled between the first node and the second node, the second resonator comprising
• a second capacitor device, the second capacitor device comprising a second substrate member, the second substrate member having a second cavity region and a second upper surface region contiguous with a second opening of the second cavity region,
• a second bottom electrode within a portion of the second cavity region,
• a second piezoelectric material overlying the second upper surface region and the second bottom electrode,
• a second top electrode overlying the second piezoelectric material and overlying the second bottom electrode, and
• a second insulating material overlying the second top electrode and configured with a second thickness to tune the second resonator;
• a third node coupled to the second node;
• a third resonator coupled between the second node and the third node, the third resonator comprising a third capacitor device, the third capacitor device comprising
• a third substrate member, the third substrate member having a third cavity region and a third upper surface region contiguous with a third opening of the third cavity region,
• a third bottom electrode within a portion of the third cavity region,
• a third piezoelectric material overlying the third upper surface region and the third bottom electrode,
• a third top electrode overlying the third piezoelectric material and overlying the third bottom electrode, and
• a third insulating material overlying the third top electrode and configured with a third thickness to tune the third resonator;
• a fourth node coupled to the third node;
• a fourth resonator coupled between the third node and the fourth node, the fourth resonator comprising a fourth capacitor device, the fourth capacitor device comprising
• a fourth substrate member, the fourth substrate member having a fourth cavity region and a fourth upper surface region contiguous with a fourth opening of the fourth cavity region,
• a fourth bottom electrode within a portion of the fourth cavity region,
• a fourth piezoelectric material overlying the fourth upper surface region and the fourth bottom electrode,
• a fourth top electrode overlying the fourth piezoelectric material and overlying the fourth bottom electrode, and
• a fourth insulating material overlying the fourth top electrode and configured with a fourth thickness to tune the fourth resonator;
• an output port coupled to the fourth node;
• a serial configuration comprising the input port, the first node, the first resonator, the second node, the second resonator, the third node, the third resonator, the fourth resonator, the fourth node, and the output port;
• a first shunt configuration resonator coupled to the first node;
• a second shunt configuration resonator coupled to the second node;
• a third shunt configuration resonator coupled to the third node;
• and
• a fourth shunt configuration resonator coupled to the fourth node;
• a parallel configuration comprising the first shunt configuration resonator, the second shunt configuration resonator, the third shunt configuration resonator, and the fourth shunt configuration resonator;
• and
• a circuit response between the input port and the output port and configured from the serial configuration and the parallel configuration to achieve a transmission loss from a pass band having a characteristic frequency centered around 5.5025 GHz and having a bandwidth from 5.170 GHz to 5.835 GHz such that the characteristic frequency centered around 5.5025 GHz is tuned from a lower frequency ranging from about 4.9 GHz to 5.4 GHz, the device further comprising:
• a minimum attenuation of 26 dB for a frequency range of 600 MHz to 2700 MHz;
• a minimum attenuation of 23 dB for a frequency range of 3300 MHz to 4200 MHz;
• a minimum attenuation of 35 dB for a frequency range of 4400 MHz to 5000 MHz;
• and
• a minimum attenuation of 20 dB for a frequency range of 5950 MHz to 11000 MHz.