Assembly of piezoelectric material substrate and support substrate, and method for manufacturing said assembly
AssigneeNGK Insulators, Ltd.
InventorsYuji Hori, Takahiro Yamadera, Tatsuro Takagaki
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Abstract
A bonded body includes a supporting substrate, a silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate. An average value of a nitrogen concentration of the silicon oxide layer is higher than a nitrogen concentration at an interface between the silicon oxide layer and supporting substrate and higher than a nitrogen concentration at an interface between the silicon oxide layer and piezoelectric material substrate.
Claims6
A bonded body comprising:
- a supporting substrate;
- a silicon oxide layer provided on said supporting substrate;
- and
- a piezoelectric material substrate provided on said silicon oxide layer, said piezoelectric material substrate comprising a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate,
- wherein an average value of a nitrogen concentration of said silicon oxide layer is higher than a nitrogen concentration at an interface between said silicon oxide layer and said supporting substrate and higher than a nitrogen concentration at an interface between said silicon oxide layer and said piezoelectric material substrate, and
- wherein an average value of a carbon concentration of said silicon oxide layer is higher than a carbon concentration at said interface between said silicon oxide layer and said supporting substrate and higher than a carbon concentration at said interface between said silicon oxide layer and said piezoelectric material substrate.
A bonded body comprising:
- a supporting substrate;
- a silicon oxide layer provided on said supporting substrate;
- and
- a piezoelectric material substrate provided on said silicon oxide layer, said piezoelectric material substrate comprising a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalate,
- wherein an average value of a nitrogen concentration of said silicon oxide layer is higher than a nitrogen concentration at an interface between said silicon oxide layer and said supporting substrate and higher than a nitrogen concentration at an interface between said silicon oxide layer and said piezoelectric material substrate, and
- wherein an average value of a fluorine concentration of said silicon oxide layer is higher than a fluorine concentration at said interface between said silicon oxide layer and said supporting substrate and higher than a fluorine concentration at said interface between said silicon oxide layer and said piezoelectric material substrate.
Dependencies are inferred from the claim text.