Semiconductor multilayer structure

A semiconductor device comprising:

• a substrate comprising a layer made of Ge;
• and
• a semiconductor multilayer structure comprising:
• at least one first layer comprising a material selected from a group consisting of:
• AlxGa1-xAs, wherein x is approximately 0.6,
• AlxGa1-x-yInyAs, wherein 0≤x≤0.6 and 0≤y≤0.02,
• AlxGa1-x-yInyAs1-zPz, AlxGa1-x-yInyAs1-zNz, and AlxGa1-x-yInyAs1-z-cNzPc, wherein 0≤x<1, 0≤y<1, 0≤z≤0.3, and 0≤c<1,
• AlxGa1-x-yInyAs1-z-cNzSbc, wherein 0≤x<1, 0≤y<1, 0≤z≤0.3, and 0≤c≤0.7, and
• AlxGa1-x-yInyAs1-z-cPzSbc, wherein 0≤x<1, 0≤y<1, 0≤z<1, and 0≤c≤0.3, wherein for any material a sum of the contents of all group-III elements equals 1 and a sum of the contents of all group-V elements equals 1;
• and
• at least one second layer comprising a material selected from a group consisting of GaInAsNSb, GaInAsN, AlGaInAsNSb, AlGaInAsN, GaAs, GaInAs, GaInAsSb, GaInNSb, GaInP, GaInPNSb, GaInPSb, GaInPN, AlInP, AlInPNSb, AlInPN, AlInPSb, AlGaInP, AlGaInPNSb, AlGaInPN, AlGaInPSb, GaInAsP, GaInAsPNSb, GaInAsPN, GaInAsPSb, GaAsP, GaAsPNSb, GaAsPN, GaAsPSb, AlGaInAs and AlGaAs, wherein for any material a sum of the contents of all group-III elements equals 1 and a sum of the contents of all group-V elements equals 1;
• wherein the semiconductor multilayer structure is grown on the layer made of Ge;
• wherein the at least one first layer of the semiconductor multilayer structure has a lattice constant, which differs from a lattice constant of the Ge layer of the substrate by less than a difference between a lattice constant of GaAs and a lattice constant of Ge.