Strain-inducing nanostructures for spectral red-shifting of light emitting devices
AssigneeVersitech Limited
InventorsHoi Wai Choi, Wai Yuen Fu
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Abstract
A nanostructure fabricated on a semiconductor light-emitting device induces strain in the active region. The active device includes at least one quantum heterostructure, in which the strain changes the extent of Quantum Confined Stark Effect, and thus modifies the wavelength of light emission. By mixing strain relaxation and strain induction effects there is a spectral broadening of the light emission, providing polychromatic light emission.
Claims4
A matrix addressable monolithic full color display, comprising RGB pixels fabricated on a green light-emitting LED wafer based on III-V semiconductor materials, wherein the red light-emitting pixels are formed by a plurality of strain-inducing nanostructures, and wherein the blue-emitting pixels are formed by a plurality of strain relaxing nano structures.
Dependencies are inferred from the claim text.