Engineered substrate architecture for InGaN red micro-LEDs

A method of fabricating a light emitting diode (LED) device, the method comprising:

• forming a plurality of precursor mesa structures on a substrate, each precursor mesa structure of the plurality of precursor mesa structures comprising:
• a layer of a first semiconductor material grown on the substrate;
• a porous layer of the first semiconductor material on the layer of the first semiconductor material, the porous layer characterized by an areal porosity equal to or greater than 15%;
• and
• a layer of a second semiconductor material on the porous layer, the second semiconductor material characterized by a lattice constant greater than a lattice constant of the first semiconductor material;
• forming an LED layer stack on each precursor mesa structure of the plurality of precursor mesa structures, the LED layer stack comprising:
• an active region on the layer of the second semiconductor material, the active region configured to emit red light;
• and
• a p-contact layer on the active region;
• etching, using a mask layer, the LED layer stack to remove peripheral regions of the LED layer stack and to form one or more pixel mesa structures on each precursor mesa structure of the plurality of precursor mesa structures;
• forming a dielectric layer on sidewalls of each pixel mesa structures of the one or more pixel mesa structures;
• etching, using the mask layer on the one or more pixel mesa structure, the plurality of precursor mesa structures on the substrate;
• and
• forming an n-contact layer on sidewalls of each pixel mesa structure of the one or more pixel mesa structures, the n-contact layer in physical contact with the dielectric layer, at least a portion of sidewalls of the layer of the second semiconductor material, and sidewalls of the porous layer.