Composite substrate and light-emitting diode
AssigneesIndustrial Technology Research Institute, Opto Tech Corporation
InventorsChia-Yen Huang, Chang Da Tsai
Life of this patent
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Abstract
A composite substrate including a substrate, a buffer layer, and a strain release layer. The buffer layer is disposed on the substrate is provided. The strain release layer is disposed on the buffer layer, wherein the buffer layer is between the substrate and the strain release layer. A material of the strain release layer includes Al1-xGaxN, where 0≤x<0.15. The strain release layer is doped with silicon to release a compressive strain due to the buffer layer. A concentration of silicon doped in the strain release layer is greater than 1019 cm−3. A defect density of the strain release layer is less than or equal to 5×109/cm2. A light-emitting diode is also provided.
Claims20
A composite substrate comprising:
- a substrate;
- a buffer layer disposed on the substrate;
- and
- a strain release layer disposed on the buffer layer, wherein the buffer layer is between the substrate and the strain release layer, a material of the strain release layer comprises Al1-xGaxN, where 0≤x<0.15, the strain release layer is doped with silicon to release a compressive strain due to the buffer layer, a concentration of silicon doped in the strain release layer is greater than 1019 cm−3, and a surface defect density of the strain release layer is less than or equal to 5×109/cm2.
A light-emitting diode (LED) comprising:
- a substrate;
- a buffer layer disposed on the substrate;
- a strain release layer disposed on the buffer layer, wherein the buffer layer is between the substrate and the strain release layer, a material of the strain release layer comprises Al1-xGaxN, where 0≤x<0.15, the strain release layer is doped with silicon to release a compressive strain due to the buffer layer, a concentration of silicon doped in the strain release layer is greater than 1019 cm−3, and a surface defect density of the strain release layer is less than or equal to 5×109/cm2;
- an n-type semiconductor layer disposed on the strain release layer, a material of the n-type semiconductor layer comprising Al1-zGazN, where z>x+0.15;
- a light-emitting layer disposed on the n-type semiconductor layer;
- a p-type semiconductor layer disposed on the light-emitting layer;
- and
- an electrode contacting layer disposed on the p-type semiconductor layer.
Dependencies are inferred from the claim text.