Photoelectric integrated device and manufacturing method thereof
AssigneeSilergy Semiconductor Technology (Hangzhou) LTD
InventorsZheng Lv, Huisen He, Xianguo Huang
Life of this patent
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Abstract
A method of manufacturing an optoelectronic integrated device can include: providing a semiconductor substrate including at least one optoelectronic device in the semiconductor substrate; forming a first dielectric layer on a first surface of the semiconductor substrate; forming a multilayer insulating layer on the first dielectric layer; forming a first opening in the multilayer insulating layer to expose the first dielectric layer above the optoelectronic device area; and forming a second dielectric layer on the dielectric layer, where the first dielectric layer and the second dielectric layer are anti-reflection layers.
Claims20
A method of manufacturing an optoelectronic integrated device, the method comprising:
- a) providing a semiconductor base having an optoelectronic device;
- b) forming a first dielectric layer on a first surface of the semiconductor base;
- c) forming an insulating layer on the first dielectric layer, wherein the insulating layer comprises an interlayer dielectric layer, an inter-metal dielectric layer, and a passivation layer, wherein the interlayer dielectric layer that is adjacent to the first dielectric layer comprises oxide;
- d) forming a first opening in the insulating layer to expose the first dielectric layer above the optoelectronic device;
- and
- e) forming a second dielectric layer on the exposed first dielectric layer, wherein the first and second dielectric layers are together configured as an anti-reflection layer, wherein each of the first and second dielectric layers comprises a silicon nitride material, a thickness of the first dielectric layer is in a range of from about 400 Å to about 600 Å, and a thickness of the second dielectric layer is in a range of from about 250 Å to about 350 Å,
- f) wherein an upper surface of the first dielectric layer forms a bottom of the first opening above the optoelectronic device, and wherein a total thickness of the anti-reflection layer over a central region near the bottom of the first opening is not greater than a height of the first opening.
An optoelectronic integrated device, comprising:
- a) a semiconductor base having an optoelectronic device in the semiconductor base;
- b) a first dielectric layer covering a first surface of the semiconductor base;
- c) an insulating layer covering the first dielectric layer, wherein the insulating layer comprises an interlayer dielectric layer, an inter-metal dielectric layer, and a passivation layer, wherein the interlayer dielectric layer that is adjacent to the first dielectric layer comprises oxide;
- d) a first opening located in the insulating layer above the optoelectronic device;
- and
- e) a second dielectric layer within the first opening and covering the first dielectric layer, wherein the first and second dielectric layers are configured as an anti-reflection layer, wherein each of the first and second dielectric layers comprises a silicon nitride material, a thickness of the first dielectric layer is in a range of from about 400 Å to about 600 Å, and a thickness of the second dielectric layer is in a range of from about 250 Å to about 350 Å,
- f) wherein an upper surface of the first dielectric layer forms a bottom of the first opening above the optoelectronic device, and wherein a total thickness of the anti-reflection layer over a central region near the bottom of the first opening is not greater than a height of the first opening.
Dependencies are inferred from the claim text.