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US 11,688,812 B2Granted
Semiconductor device with treated interfacial layer on silicon germanium
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Yu Chang, Hsiang-Pi Chang, Zi-Wei Fang
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Abstract
A method includes following steps. A silicon germanium layer is formed on a substrate. A surface layer of the silicon germanium layer is oxidized to form an interfacial layer comprising silicon oxide and germanium oxide. The interfacial layer is nitridated. A metal gate structure is formed over the nitridated interfacial layer.
Claims20
A method comprising:
- forming a silicon germanium layer on a substrate;
- oxidizing a surface layer of the silicon germanium layer to form an interfacial layer comprising silicon oxide and germanium oxide;
- nitridating the interfacial layer;
- and
- forming a metal gate structure over the nitridated interfacial layer.
2 more elements
A method comprising:
- epitaxially growing a silicon germanium layer on a substrate;
- performing an oxidation treatment to form an oxide layer of silicon germanium on the silicon germanium layer;
- performing a germanium oxide desorption treatment on the oxide layer to reduce a ratio of germanium oxide to silicon oxide in the oxide layer;
- after performing the germanium oxide desorption treatment, nitridating the oxide layer;
- and
- forming a metal gate structure over the nitridated oxide layer.
3 more elements
A method comprising:
- forming a layer of semiconductor alloy of silicon and germanium on a substrate;
- oxidizing a surface portion of the layer of semiconductor alloy;
- treating the oxidized portion of the layer of semiconductor alloy with trimethyl aluminum (TMA);
- nitridating the oxidized portion of the layer of semiconductor alloy;
- and
- after nitridating the oxidized portion of the layer of semiconductor alloy, forming a metal gate structure over the oxidized portion of the layer of semiconductor alloy.
3 more elements
Dependencies are inferred from the claim text.