Semiconductor device structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Cheng Ching, Kuan-Ting Pan, Kuan-Lun Cheng, Chih-Hao Wang
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Abstract
A semiconductor device structure includes a fin structure, a semiconductive capping layer, an oxide layer, and a gate structure. The fin structure protrudes above a substrate. The semiconductive capping layer wraps around three sides of a channel region of the fin structure. The oxide layer wraps around three sides of the semiconductive capping layer. A thickness of a top portion of the semiconductive capping layer is less than a thickness of a top portion of the oxide layer. The gate structure wraps around three sides of the oxide layer.
Claims20
A semiconductor device structure, comprising:
- a fin structure protruding above a substrate;
- a semiconductive capping layer wrapping around three sides of a channel region of the fin structure;
- an oxide layer wrapping around three sides of the semiconductive capping layer, wherein a thickness of a top portion of the semiconductive capping layer is less than a thickness of a top portion of the oxide layer;
- and
- a gate structure wrapping around three sides of the oxide layer.
A semiconductor device structure, comprising:
- a silicon fin and a silicon germanium (SiGe) fin over a substrate;
- a shallow trench isolation (STI) region between the silicon fin and the SiGe fin;
- a dielectric layer over the silicon fin and the SiGe fin, wherein the dielectric layer comprises a first thick portion directly above the silicon fin, a second thick portion directly above the SiGe fin, and a thin portion extending from the first thick portion, along a top surface of the STI region, to the second thick portion, and the first and second thick portions are thicker than the thin portion;
- and
- a gate structure over the dielectric layer.
A semiconductor device structure, comprising:
- a silicon germanium (SiGe) fin protruding above a substrate;
- a silicon layer wrapping around three sides of the SiGe fin, wherein the silicon layer is thicker on a top surface of the SiGe fin than on sidewalls of the SiGe fin;
- an oxide layer wrapping around three sides of the silicon layer;
- and
- a gate structure wrapping around three sides of the oxide layer.
Dependencies are inferred from the claim text.