Semiconductor device and methods of forming

A method comprising:

• depositing a first dummy gate over and along sidewalls of a first fin, the first fin extending from a substrate;
• forming a first gate spacer along a sidewall of the first dummy gate;
• forming a first recess in the first fin adjacent the first gate spacer;
• forming a first source/drain region in the first recess, the forming the first source/drain region comprising:
• epitaxially growing a first layer in the first recess, the first layer extending above a top surface of the first fin, the first layer having a first dopant concentration of a first dopant;
• and
• epitaxially growing a second layer on the first layer, the second layer having a second dopant concentration of the first dopant, the second dopant concentration being greater than the first dopant concentration;
• and
• forming an etch stop layer over the first source/drain region and on a sidewall of the first gate spacer, the etch stop layer extending along a top surface of and physically contacting the second layer of the first source/drain region.

A method comprising:

• forming a first dummy gate over and along sidewalls of a first fin extending upwards from a substrate;
• forming a first gate spacer along a sidewall of the first dummy gate;
• etching a first recess in the first fin adjacent the first gate spacer;
• forming a first source/drain region in the first recess, the first source/drain region comprising a first epitaxial layer and a second epitaxial layer, the first epitaxial layer being grown from the first fin in the first recess, the second epitaxial layer being grown from the first epitaxial layer, the second epitaxial layer having a greater concentration of boron than the first epitaxial layer, the second epitaxial layer being an outermost layer of the first source/drain region;
• and
• replacing the first dummy gate with a first functional gate stack disposed over and along sidewalls of the first fin.