Semiconductor device with ring-shaped doped region and manufacturing method thereof

A semiconductor device, comprising:

• a substrate having a first conductive type doped well in the substrate, a second conductive type doped well in the first conductive type doped well and isolation structures thereon defining a first region and a second region of the substrate;
• a first conductive type doped drain region, located within the first conductive type doped well and located in the first region of the substrate;
• a first conductive type doped source region, located within the second conductive type doped well and in the second region of the substrate, and completely surrounding the first conductive type doped drain region;
• a gate structure, disposed partially on the substrate and partially on one of the isolation structures, wherein the gate structure is disposed between the first conductive type doped source region and the first conductive type doped drain region, and the first conductive type doped source region surrounds the gate structure;
• a channel region located under the gate structure and within the second conductive type doped well;
• and
• a metallic line, located above the first conductive type doped source and drain regions and the gate structure, wherein the metallic line is electrically connected to the first conductive type doped drain region,
• wherein the first conductive type doped source region has a split loop-shaped top view divided by a break region, and wherein the metallic line extends across the gate structure and across the break region and beyond the first conductive type doped source region.

A method of manufacturing a semiconductor device, comprising:

• forming a first conductive type doped well in the substrate;
• forming a second conductive type doped well in the first conductive type doped well in the substrate;
• forming isolation structures on the substrate to define a first region and a second region of the substrate;
• forming a gate structure and conductive semiconductor patterns on the isolation structures and on the substrate;
• forming first conductive type doped regions and second conductive type doped regions in the first and second regions of the substrate, wherein forming the first conductive type doped regions in the first and second regions of the substrate comprises forming a first conductive type doped drain region in the first region and forming a first conductive type doped source region in the second region, and the first conductive type doped source region completely surrounds the first conductive type doped drain region;
• and
• forming at least one metallic line above and across the gate structure, wherein the at least one metallic line extends across the first conductive type doped region and the second conductive type doped region in the second region and is electrically connected with at least one of the first conductive type doped regions and second conductive type doped regions.